Novel InN growth method under In-rich condition on GaN/Al2O3 (0001) templates

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue SUPPL. 2, 2009, Pages

  Yamaguchi, Tomohiro ^a   Muto, Daisuke ^a   Araki, Tsutomu ^a   Maeda, Narihiko ^a,b   Nanishi, Yasushi ^a  

^a RITSUMEIKAN UNIVERSITY   (Japan)

^b NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GROWTH METHOD; INN FILMS; NITROGEN RADICAL; NOVEL TECHNIQUES; RADIO FREQUENCY PLASMA; RICH CONDITIONS; V/III RATIO;

IRRADIATION; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NITROGEN;

FILM GROWTH;

EID: 74549166018     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200880806     Document Type: Article

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