InN: A material with photovoltaic promise and challenges

Journal of Crystal Growth

Volumn 288, Issue 2, 2006, Pages 218-224

  Trybus, Elaissa ^a   Namkoong, Gon ^a   Henderson, Walter ^a   Burnham, Shawn ^a   Doolittle, W Alan ^a   Cheung, Maurice ^b   Cartwright, Alexander ^b  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b UNIVERSITY AT BUFFALO   (United States)

Author keywords

A1. X ray diffraction; A3. Molecular beam epitaxy; B3. Semiconducting III V materials; B3. Solar cells

Indexed keywords

LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; PHOTOVOLTAIC EFFECTS; SAPPHIRE; SOLAR CELLS; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

INDIUM OXYNITRIDE; SOLAR SPECTRUM;

INDIUM COMPOUNDS;

EID: 32644449185     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.12.120     Document Type: Conference Paper

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