Polarity control of InN grown by MOVPE on sapphire (0001)

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 4, Issue 7, 2007, Pages 2415-2418

  Wang, W J ^a   Sugita, K ^a   Nagai, Y ^a   Houchin, Y ^a   Hashimoto, A ^a   Yamamoto, A ^a  

^a UNIVERSITY OF FUKUI   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING PROCESSING; INN FILMS; N-POLARITY; NITRIDE SEMICONDUCTORS; NITRIDED SAPPHIRE; POLARITY CONTROL; SAPPHIRE SUBSTRATES; SUBSTRATE NITRIDATION;

ANNEALING; CORUNDUM; CRYSTALS; ELECTRIC CONDUCTIVITY; FILM GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; NITRIDES; PROCESS CONTROL; SAPPHIRE; SEMICONDUCTING GALLIUM; SEMICONDUCTOR GROWTH; SEMICONDUCTOR MATERIALS;

SUBSTRATES;

EID: 49749128401     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200674744     Document Type: Conference Paper

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