Characterization of a-plane InN film grown on r-plane sapphire by MOCVD

Journal of Crystal Growth

Volumn 310, Issue 16, 2008, Pages 3726-3729

  Zhu, X L ^a   Guo, L W ^a   Peng, M Z ^a   Ge, B H ^a   Zhang, J ^a   Ding, G J ^a   Jia, H Q ^a   Chen, H ^a   Zhou, J M ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

A1. Atomic force microscopy; A1. X ray diffraction; A3. Metalorganic chemical vapor deposition; B1. InN

Indexed keywords

CHEMICAL VAPOR DEPOSITION; SULFUR COMPOUNDS;

A PLANE; IN-PLANE ORIENTATIONS; PLANE SAPPHIRE; WURTZITE (WZ);

SAPPHIRE;

EID: 48049098172     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.06.004     Document Type: Article

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