Growth of high-quality hexagonal InN on 3C-SiC (001) by molecular beam epitaxy

Physica Status Solidi C: Conferences

Volumn 2, Issue 7, 2005, Pages 2267-2270

  Yaguchi, Hiroyuki ^a,b   Kitamura, Yoshihiro ^a   Nishida, Kenji ^a   Iwahashi, Yohei ^a   Hijikata, Yasuto ^a,b   Yoshida, Sadafumi ^a,b  

^a SAITAMA UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; X RAY DIFFRACTION ANALYSIS;

EPITAXIAL LAYERS; LATTICE MISMATCH;

INDIUM COMPOUNDS;

EID: 27344439489     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200461386     Document Type: Conference Paper

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