Growth of wurtzite InN using MOVPE and its optical characteristics

Physica Status Solidi C: Conferences

Volumn , Issue 7, 2003, Pages 2806-2809

  Matsuoka, T ^a   Okamoto, H ^b   Nakao, M ^b  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^b NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION AND PHOTOLUMINESCENCE; BAND GAP ENERGY; BAND-GAP BOWINGS; CONFOCAL MICRO-RAMAN; OPTICAL CHARACTERISTICS; OPTIMIZED CONDITIONS; TEMPERATURE DEPENDENCE; TEMPERATURE STABILITY;

ENERGY GAP; EPITAXIAL GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; PHASE DIAGRAMS; X RAY DIFFRACTION;

ZINC SULFIDE;

EID: 2942667139     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303301     Document Type: Conference Paper

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