InN grown by remote plasma-enhanced chemical vapor deposition

Journal of Crystal Growth

Volumn 269, Issue 1, 2004, Pages 134-138

  Wintrebert Fouquet, M ^a   Butcher, K Scott A ^a   Chen, P P T ^a  

^a MACQUARIE UNIVERSITY   (Australia)

Author keywords

A1. Characterization; A3. Chemical vapor deposition processes; B1. Nitrides

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DENSITY (OPTICAL); FILM GROWTH; LIGHT ABSORPTION; METALLORGANIC VAPOR PHASE EPITAXY; PLASMAS; SAPPHIRE; SUBSTRATES; THIN FILMS;

INN; INN FILMS; PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION; SAPPHIRE SUBSTRATES;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 3342983214     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.05.043     Document Type: Conference Paper

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