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Volumn 235, Issue 1-4, 2002, Pages 115-123

Lateral epitaxial overgrowth of GaN using diethyl gallium chloride in metal organic vapor phase epitaxy

(6) Zhang, L a Gu, S L a Zhang, R a Hansen, D M a Boleslawski, M P b Kuech, T F a

a Wisconsin Electric Machines and Power Electronics Consortium (United States)

b Sigma Aldrich Fine Chemicals (United States)

Author keywords

A3. Chloride vapor phase epitaxy; A3. Metalorganic vapor phase epitaxy; A3. Selective epitaxy; B1. Gallium compounds; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

COALESCENCE; DECOMPOSITION; DENSITY (SPECIFIC GRAVITY); ETCHING; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; X RAY DIFFRACTION ANALYSIS;

SELECTIVE EPITAXY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0036467102 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)01835-8 Document Type: Article

Times cited : (10)

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