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Journal of Crystal Growth

Volumn 311, Issue 10, 2009, Pages 2791-2794

Alternative precursors for MOVPE growth of InN and GaN at low temperature

(9) Ruffenach, S a Moret, M a Briot, O a Gil, B a Giesen, Ch b Heuken, M b Rushworth, S c Leese, T c Succi, M d

a UNIVERSITÉ MONTPELLIER 2 (France)

b AIXTRON AG (Germany)

c SAFC Hitech (United Kingdom)

d SAES GETTERS S P A (Italy)

Author keywords

A3. MOCVD; B1. Dimethylhydrazine; B1. InN; B1. Tertiarybuthylhydrazine; B1. Triethylindium

Indexed keywords

A3. MOCVD; B1. DIMETHYLHYDRAZINE; B1. INN; B1. TERTIARYBUTHYLHYDRAZINE; B1. TRIETHYLINDIUM;

AMMONIA; ARGON; CHEMICAL VAPOR DEPOSITION; CRYSTALS; GALLIUM NITRIDE; HYDROGEN; METALLORGANIC VAPOR PHASE EPITAXY; NITROGEN; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM;

GALLIUM ALLOYS;

EID: 65949111526 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2009.01.038 Document Type: Article

Times cited : (10)

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