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Volumn 228, Issue 1, 2001, Pages 303-307

Passivation and doping due to hydrogen in III-nitrides

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Indexed keywords


EID: 0035541095     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-3951(200111)228:1<303::AID-PSSB303>3.0.CO;2-A     Document Type: Article
Times cited : (85)

References (13)
  • 1
    • 0001419352 scopus 로고    scopus 로고
    • Gallium nitride (GaN) II
    • Eds. J. I. PANKOVE and T. D. MOUSTAKAS, Treatise Eds. R. K. WILLARDSON and E. R. WEBER, Academic Press, Boston
    • C. G. VAN DE WALLE and N. M. JOHNSON, in: Gallium Nitride (GaN) II, Eds. J. I. PANKOVE and T. D. MOUSTAKAS, Semiconductors and Semimetals, Vol. 57, Treatise Eds. R. K. WILLARDSON and E. R. WEBER, Academic Press, Boston 1998 (p. 157).
    • (1998) Semiconductors and Semimetals , vol.57 , pp. 157
    • Van De Walle, C.G.1    Johnson, N.M.2
  • 11


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.