Shallow donor state of hydrogen in indium nitride

Applied Physics Letters

Volumn 82, Issue 4, 2003, Pages 592-594

  Davis, E A ^a   Cox, S F J ^b,c   Lichti, R L ^d   Van de Walle, C G ^e  

^a UNIVERSITY OF LEICESTER   (United Kingdom)

^b RUTHERFORD APPLETON LABORATORY   (United Kingdom)

^c UNIVERSITY COLLEGE LONDON   (United Kingdom)

^d TEXAS TECH UNIVERSITY   (United States)

^e PALO ALTO RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; HYDROGEN; IONIZATION; PROTONS; SEMICONDUCTING INDIUM COMPOUNDS;

POSITIVE MUONS;

ELECTRON ENERGY LEVELS;

EID: 0037468061     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1539547     Document Type: Article

References (15)

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9. Figure 1 reflects the recently revised value of the InN band gap [J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager III, E. E. Haller, Hai Lu, W. J. Schaff, Y. Saito, and Y. Nanishi, Appl. Phys. Lett. 80, 3967 (2002)], but our predictions and results were not affected by this revision.
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