Growth of InN on Ge substrate by molecular beam epitaxy

Journal of Crystal Growth

Volumn 279, Issue 3-4, 2005, Pages 311-315

  Trybus, Elaissa ^a   Namkoong, Gon ^a   Henderson, Walter ^a   Doolittle, W Alan ^a   Liu, Rong ^b   Mei, Jin ^b   Ponce, Fernando ^b   Cheung, Maurice ^c   Chen, Fei ^c   Furis, Madalina ^c   Cartwright, Alexander ^c  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b ARIZONA STATE UNIVERSITY   (United States)

^c UNIVERSITY AT BUFFALO   (United States)

Author keywords

A3. Molecular beam epitaxy; B2. Semiconducting germanium; B3. Heterojunction semiconductor devices; B3. Semiconducting III V materials

Indexed keywords

DOPING (ADDITIVES); GALLIUM; HETEROJUNCTIONS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR DEVICES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

BANDGAP; EPILAYERS; HETEROJUNCTION SEMICONDUCTOR DEVICES; SEMICONDUCTING III-V MATERIALS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 20844452183     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.02.041     Document Type: Article

References (14)

1. Q.Z. Liu, and S.S. Lau Solid State Electron. 42 1998 677
2. M.S. Shur Solid State Electron. 42 1998 2131
3. J.C. Zopler Solid State Electron. 42 1998 2153
4. V.Yu. Davydov, A.A. Klochikhin, R.P. Seisyan, V.V. Emtsev, S.V. Ivanov, F. Bechstedt, J. Furthmüller, H. Harima, A.V. Mudryi, J. Aderhold, O. Semchinova, and J. Graul Phys. Stat. Sol. B. 229 2002 R1
5. J. Wu, W. Walukiewicz, K.M. Yu, J.W. Ager III, E.E. Haller, H. Lu, W.J. Schaff, Y. Saito, and Y. Nanishi Appl. Phys. Lett. 80 2002 3967
6. A.G. Bhuiyan, A. Hashimoto, and A. Yamamoto J. Appl. Phys. 94 2003 2779
7. R.F. Pierret Semiconductor Device Fundamentals 1996 Addison-Wesley Publishing Company Reading, MA p. 32
8. A. Yamamoto, T. Tanaka, K. Koide, and A. Hashimoto Phys. Stat. Sol. A 194 2002 510
9. H. Lu, W.J. Schaff, J. Hwang, H. Wu, G. Koley, and L.F. Eastman Appl. Phys. Lett. 79 2001 1489
10. A. Yamamoto, M. Tsujino, M. Ohkubo, and A. Hashimoto J. Crystal Growth 137 1994 415
11. G. Namkoong, W.A. Doolittle, A.S. Brown, M. Losurdo, P. Capezzuto, and G. Bruno J. Appl. Phys. 91 2002 2499
12. L. Chernyak, A. Osinsky, G. Nootz, A. Schulte, J. Jasinski, M. Benamara, Z. Liliental-Weber, D.C. Look, and R.J. Molnar Appl. Phys. Lett. 77 2001 2695
13. H. He, T. Sekine, T. Kobayashi, and K. Kimoto J. Appl. Phys. 90 2001 4003
14. I. Chambouleyron, and A.R. Zanatta J. Appl. Phys. 84 1998 1