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Volumn 95, Issue 2, 2009, Pages

The role of threading dislocations and unintentionally incorporated impurities on the bulk electron conductivity of In-face InN

(3) Gallinat, Chad S a Koblmüller, Gregor a Speck, James S a

a University of California (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AS-GROWN; BULK ELECTRONS; CONCENTRATION OF; ELECTRON CONCENTRATION; GROWTH TECHNIQUES; INN FILMS; SCATTERING CENTERS; THREADING DISLOCATION; THREADING DISLOCATION DENSITIES;

ELECTRON MOBILITY; ELECTRON TRANSITIONS; ELECTRON TRANSPORT PROPERTIES; HYDROGEN; OXYGEN; TRANSPORT PROPERTIES;

SINGLE CRYSTALS;

EID: 67650733476 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3173202 Document Type: Article

Times cited : (65)

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