One-dimensional group III-nitrides: Growth, properties, and applications in nanosensing and nano-optoelectronics

Critical Reviews in Solid State and Materials Sciences

Volumn 34, Issue 3-4, 2009, Pages 224-279

  Chattopadhyay, Surojit ^a   Ganguly, Abhijit ^b   Chen, Kuei Hsien ^b,c   Chen, Li Chyong ^b  

^a NATIONAL YANG MING UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^c INSTITUTE OF ATOMIC AND MOLECULAR SCIENCES   (Taiwan)

Author keywords

AIN; GaN; InN; Nano optoelectronics; Nano sensing; Nanostructures

Indexed keywords

AIN; CHARACTERIZATION METHODS; COMPLEX STRUCTURE; CORE SHELL STRUCTURE; DNA SENSING; ELECTRICAL CONDUCTION; FUTURE DIRECTIONS; GAS SENSORS; GROUP III; GROUP III NITRIDES; MATERIAL SYSTEMS; NANO-MATERIALS; NANOSENSING; PHOTOCONDUCTION; SENSOR APPLICATIONS; SIZE AND SHAPE; TERNARY COMPOUNDS;

BIOSENSORS; ELECTRIC PROPERTIES; ELECTRIC WIRE; FIELD EFFECT TRANSISTORS; FLUORINE CONTAINING POLYMERS; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMITTING DIODES; MECHANICAL PROPERTIES; NANOBELTS; NANOSTRUCTURED MATERIALS; NUCLEIC ACIDS; OPTICAL PROPERTIES; SEMICONDUCTING GALLIUM;

NANOSENSORS;

EID: 72449163084     PISSN: 10408436     EISSN: 15476561     Source Type: Journal    
DOI: 10.1080/10408430903352082     Document Type: Article

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