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Applied Physics Letters

Volumn 81, Issue 1, 2002, Pages 22-24

Selective-area growth of indium nitride nanowires on gold-patterned Si(100) substrates

(6) Liang, C H a Chen, L C a Hwang, J S b Chen, K H b Hung, Y T a Chen, Y F a

a NATIONAL TAIWAN UNIVERSITY (Taiwan)

b INSTITUTE OF ATOMIC AND MOLECULAR SCIENCES (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EMISSION PEAKS; ENERGY DISPERSIVE X-RAY SPECTROMETRY; INDIUM NITRIDE; INN NANOWIRES; LONGITUDINAL OPTICAL; PHONON MODE; PHOTOLUMINESCENCE SPECTRUM; SELECTIVE AREA GROWTH; SI (100) SUBSTRATE; SILICON SUBSTRATES; TRANSVERSE OPTICAL; WURTZITES;

GOLD; INDIUM; NITRIDES; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SINGLE CRYSTALS; THERMAL EVAPORATION; TRANSMISSION ELECTRON MICROSCOPY; ZINC SULFIDE;

NANOWIRES;

EID: 79955985042 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1490636 Document Type: Article

Times cited : (198)

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