pH response of GaN surfaces and its application for pH-sensitive field-effect transistors

Applied Physics Letters

Volumn 83, Issue 1, 2003, Pages 177-179

  Steinhoff, G ^a   Hermann, M ^a   Schaff, W J ^b   Eastman, L F ^b   Stutzmann, M ^a   Eickhoff, M ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

^b School of Chemical and Molecular Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLYTES; GATES (TRANSISTOR); HIGH ELECTRON MOBILITY TRANSISTORS; PH EFFECTS; SURFACES; THERMOOXIDATION;

ELECTROLYTE SOLUTIONS;

GALLIUM NITRIDE;

EID: 0042341497     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1589188     Document Type: Article

References (19)

1. P. Bergveld, IEEE Trans. Biomed. Eng. 17, 70 (1970).
2. P. Bergveld, IEEE Trans. Biomed. Eng. 19, 342 (1972).
3. B. H. van der School, P. Bergveld, M. Bos, and L. J. Bousse, Sens. Actuators 4, 267 (1983).
4. T. Matsuo and K. D. Wise, IEEE Trans. Biomed. Eng. 21, 485 (1974).
5. M. Esashi and T. Matsuo, IEEE Trans. Biomed. Eng. 25, 184 (1978).
6. W. H. Baumann, M. Lehmann, A. Schwinde, R. Ehert, M. Britschwein, and B. Wolf. Sens. Actuators B 55, 77 (1999).
7. H. Abe, M. Esashi, and T. Matsuo, IEEE Trans. Electron Devices ED-26, 1939 (1979).
8. L. Bousse and S. Mostarshed, Sens. Actuators B 17, 157 (1994).
9. J. Schalwig, G. Müller, M. Eickhoff, O. Ambacher, and M. Stutzmann, Sens. Actuators B 87, 425 (2002).
10. M. Stutzmann, G. Steinhoff, M. Eickhoff, O. Ambacher, C. E. Nebel, J. Schalwig, R. Neuberger, and G. Müller, Diamond Relat. Mater. 11, 886 (2002).
11. R. Dimitrov, M. Murphy, J. Smart, W. Schaff, J. R. Shealy, L. F. Eastman, O. Arabacher, and M. Stutzmann, J. Appl. Phys. 87, 3375 (2000).
12. M. J. Murphy, K. Chu, H. Wu, W. Yeo, W. J. Schaff, O. Ambacher, L. F. Eastman, T. J. Eustis, J. Silcox, R. Dimitrov, and M. Stutzmann, Appl. Phys. Lett. 75, 3653 (1999).
13. M. Eickhoff, R. Neuberger, G. Steinhoff, O. Ambacher, G. Müller, and M. Stutzmann, Phys. Status Solidi B 228, 519 (2001).
14. M. Kocan, A. Rizzi, H. Lüth, S. Keller, and U. Mishra, Phys. Status Solidi B 234, 773 (2002).
15. J. Chou, C. Weng, and H. Tsai, Sens. Actuators B 81, 152 (2002).
16. D. E. Yates, S. Levine, and T. W. Healy, J. Chem. Soc., Faraday Trans. l 70, 1807 (1974).
17. W. M. Siu and R. S. C. Cobbold, IEEE Trans. Electron Devices ED-26, 1805 (1979).
18. L. Bousse, N. F. De Rooij, and P. Bergveld, IEEE Trans. Electron Devices ED-30, 1263 (1983).
19. C. D. Fung, P. W. Cheung, and W. H. Ko. IEEE Trans. Electron Devices ED-33, 8 (1986).