InGaN nanorods grown on (1 1 1) silicon substrate by hydride vapor phase epitaxy

Chemical Physics Letters

Volumn 380, Issue 1-2, 2003, Pages 181-184

  Kim, Hwa Mok ^a   Lee, W C ^a   Kang, T W ^a   Chung, K S ^b   Yoon, C S ^c   Kim, C K ^c  

^a Dongguk University   (South Korea)

^b Kyung Hee University   (South Korea)

^c Hanyang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM; INDIUM; NITROGEN DERIVATIVE; SILICON;

ARTICLE; LUMINESCENCE; MORPHOLOGY; ROOM TEMPERATURE; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY; VAPOR;

EID: 0141545019     PISSN: 00092614     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cplett.2003.09.020     Document Type: Article

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