Hexagonal-to-cubic phase transformation in GaN nanowires by Ga+ implantation

Applied Physics Letters

Volumn 84, Issue 26, 2004, Pages 5473-5475

  Dhara, S ^a,d   Datta, A ^a,e   Wu, C T ^a,b   Lan, Z H ^a   Chen, K H ^a   Wang, Y L ^a,b   Hsu, C W ^b   Shen, C H ^b   Chen, L C ^b   Chen, C C ^c  

^a INSTITUTE OF ATOMIC AND MOLECULAR SCIENCES   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^c NATIONAL TAIWAN NORMAL UNIVERSITY   (Taiwan)

^d INDIRA GANDHI CENTRE FOR ATOMIC RESEARCH   (India)

^e Netaji Nagar College for Women   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CATHODOLUMINESCENCE; CRYSTALLOGRAPHY; EPITAXIAL GROWTH; GALLIUM NITRIDE; INTERFACIAL ENERGY; ION BEAMS; ION IMPLANTATION; IRRADIATION; KINETIC THEORY; LATTICE CONSTANTS; PHONONS; PHOTOLUMINESCENCE; POSITIVE IONS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

DEFECT ANNIHILATION; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY (HRTEM); NANOWIRES; ZINC-BLEND STRUCTURE;

PHASE TRANSITIONS;

EID: 3242740337     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1760593     Document Type: Article

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