Growth of large-scale GaN nanowires and tubes by direct reaction of Ga with NH3

Applied Physics Letters

Volumn 77, Issue 23, 2000, Pages 3731-3733

  He, Maoqi ^a   Minus, Indira ^a   Zhou, Piezhen ^a   Mohammed, S Noor ^a   Halpern, Joshua B ^a   Jacobs, Randy ^b   Sarney, Wendy L ^b   Salamanca Riba, Lourdes ^b   Vispute, R D ^c  

^a HOWARD UNIVERSITY   (United States)

^b UNIVERSITY OF MARYLAND   (United States)

^c University of Maryland   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001606308     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1329863     Document Type: Article

References (15)

1. S. N. Mohammad and H. Morkoç, Prog. Quantum Electron. 20, 361 (1996).
2. H. Morkoç and S. N. Mohammad, Science 267, 51 (1995);
3. G. Fasol, ibid. 272, 1751 (1996);
4. F. A. Ponce and D. P. Bour, Nature (London) 386, 351 (1997).
5. S. M. Lee, Y. H. Lee, Y. G. Hwang, J. Elsner, D. Porezag, and T. Frauenheim, Phys. Rev. B 60, 7788 (1999).
6. W. Han, S. Fan, Q. Li, and Y. Hu, Science 277, 1287 (1997).
7. W. Han, P. Redlich, F. Ernst, and M. Ruhle, Appl. Phys. Lett. 76, 652 (2000).
8. X. F. Duan and C. M. Lieber, J. Am. Chem. Soc. 122, 188 (2000).
9. C. C. Chen and C. C. Yen, Adv. Mater. 12, 738 (2000).
10. J. Y. Li, X. L. Chen, Z. Y. Qiao, Y. G. Cao, and Y. C. Lan, J. Cryst. Growth 213, 408 (2000).
11. G. S. Cheng, L. D. Zhang, Y. Zhu, G. T. Fei, and L. Li, Appl. Phys. Lett. 75, 2455 (1999).
12. M. Yoshizawa, A. Kikuchi, M. Mori, N. Fujita, and K. Kishino, Jpn. J. Appl. Phys., Part 2 36, L459 (1997).
13. R. A. Logan and C. D. Thurmond, J. Electrochem. Soc. 119, 1727 (1972).
14. Y. J. Park, M. O. Son, E. K. Kim, and S. Min, J. Korean Phys. Soc. 32, 621 (1998).
15. D. Elwell, R. S. Feigelson, M. M. Simkins, and W. A. Tiller, J. Cryst. Growth 66, 45 (1984).