Electronic transport mechanism and photocurrent generations of single-crystalline InN nanowires

Nanotechnology

Volumn 19, Issue 41, 2008, Pages

  Lee, Sunghun ^a,b   Lee, Wonjoo ^c   Seo, Kwanyong ^a   Kim, Jinhee ^b   Han, Sung Hwan ^c   Kim, Bongsoo ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Korea Research Institute of Standards and Science   (South Korea)

^c Hanyang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CRYSTALLINE MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRIC WIRE; ELECTRON BEAM LITHOGRAPHY; ELECTRON MOBILITY; NANOSTRUCTURES; NANOWIRES; NITRIDES; PHOTOCURRENTS; QUANTUM CHEMISTRY; SCHOTTKY BARRIER DIODES; THICKNESS MEASUREMENT;

AMINOPROPYL; CONDUCTION BAND EDGES; CRYSTALLINE NATURES; ELECTRONIC TRANSPORTS; INDIUM NITRIDES; LOW TEMPERATURES; METAL ELECTRODES; NANO DEVICES; PHOTOCURRENT GENERATIONS; QUANTUM TUNNELLING; RU COMPLEXES; SCHOTTKY BARRIERS; SEMICONDUCTOR BEHAVIOURS; VIOLOGEN;

NANOSTRUCTURED MATERIALS;

INDIUM; INDIUM NITRIDE; NANOWIRE; RUTHENIUM COMPLEX; UNCLASSIFIED DRUG; VIOLOGEN;

ARTICLE; ELECTRIC CONDUCTIVITY; ELECTRON TRANSPORT; NANOFABRICATION; PHOTOCHEMISTRY; PRIORITY JOURNAL; SYNTHESIS; TEMPERATURE DEPENDENCE; TRANSMISSION ELECTRON MICROSCOPY;

EID: 56349166128     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/19/41/415202     Document Type: Article

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