Blueshift of yellow luminescence band in self-ion-implanted n-GaN nanowire

Applied Physics Letters

Volumn 84, Issue 18, 2004, Pages 3486-3488

  Dhara, S ^a,d   Datta, A ^a   Wu, C T ^a   Lan, Z H ^a   Chen, K H ^a   Wang, Y L ^a   Chen, Y F ^b   Hsu, C W ^b   Chen, L C ^b   Lin, H M ^c   Chen, C C ^c  

^a INSTITUTE OF ATOMIC AND MOLECULAR SCIENCES   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^c NATIONAL TAIWAN NORMAL UNIVERSITY   (Taiwan)

^d INDIRA GANDHI CENTRE FOR ATOMIC RESEARCH   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BAND STRUCTURE; CHEMICAL VAPOR DEPOSITION; ELECTRON TRANSITIONS; FOCUSING; HIGH RESOLUTION ELECTRON MICROSCOPY; ION BEAMS; ION IMPLANTATION; IRRADIATION; NANOSTRUCTURED MATERIALS; NITROGEN; PHOTOLUMINESCENCE; TRANSMISSION ELECTRON MICROSCOPY;

BAND-TO-BAND TRANSITIONS; DYNAMIC EVOLUTION; SELECTED AREA ELECTRON DIFFRACTION (SAED); YELLOW LUMINESCENCE;

GALLIUM NITRIDE;

EID: 2542466915     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1738172     Document Type: Article

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