Crystallographic alignment of high-density gallium nitride nanowire arrays

Nature Materials

Volumn 3, Issue 8, 2004, Pages 524-528

  Kuykendall, Tevye ^a   Pauzauskie, Peter J ^a   Zhang, Yanfeng ^b   Goldberger, Joshua ^a   Sirbuly, Donald ^b   Denlinger, Jonathan ^b   Yang, Peidong ^a,b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLOGRAPHY; ELECTRIC CONDUCTIVITY; ENERGY GAP; GALLIUM NITRIDE; LATTICE CONSTANTS; LIGHT EMISSION; LIGHT POLARIZATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PIEZOELECTRICITY; REFRACTIVE INDEX; THIN FILMS; X RAY SPECTROSCOPY;

MELTING POINT; NANOWIRE ARRAYS; NANOWIRE GROWTH; ORIENTATION-INDUCED EFECTS;

NANOSTRUCTURED MATERIALS;

GALLIUM; GALLIUM NITRIDE; NANOTUBE;

ARTICLE; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; CRYSTALLOGRAPHY; ELECTRICITY; EVALUATION; MATERIALS; MATERIALS TESTING; METALLURGY; METHODOLOGY; NANOTECHNOLOGY; SEMICONDUCTOR; SURFACE PROPERTY; ULTRASTRUCTURE; X RAY DIFFRACTION;

CRYSTALLIZATION; CRYSTALLOGRAPHY; ELECTRIC WIRING; GALLIUM; MANUFACTURED MATERIALS; MATERIALS TESTING; METALLURGY; MOLECULAR CONFORMATION; NANOTECHNOLOGY; NANOTUBES; SEMICONDUCTORS; SURFACE PROPERTIES; X-RAY DIFFRACTION;

EID: 3342920063     PISSN: 14761122     EISSN: None     Source Type: Journal    
DOI: 10.1038/nmat1177     Document Type: Article

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