High efficiency and brightness of blue light emission from dislocation-free InGaN/GaN quantum well nanorod arrays

Applied Physics Letters

Volumn 87, Issue 9, 2005, Pages

  Sun, Yuanping ^a   Cho, Yong Hoon ^a   Kim, Hwa Mok ^b   Kang, Tae Won ^b  

^a Chungbuk National University   (South Korea)

^b Dongguk University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DECAY TIME; EXTRACTION EFFICIENCY; INTENSITY RATIO; RECOMBINATION PROCESS;

ACTIVATION ENERGY; ARRAYS; ELECTRIC FIELD EFFECTS; LIGHT EMISSION; NANOSTRUCTURED MATERIALS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; VAPOR PHASE EPITAXY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 24644447380     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2037203     Document Type: Article

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