Multicolor light-emitting diodes based on semiconductor nanocrystals encapsulated in GaN charge injection layers

Nano Letters

Volumn 5, Issue 6, 2005, Pages 1039-1044

  Mueller, Alexander H ^a   Petruska, Melissa A ^a   Achermann, Marc ^a   Werder, Donald J ^a   Akhadov, Elshan A ^a   Koleske, Daniel D ^b   Hoffbauer, Mark A ^a   Klimov, Victor I ^a  

^a LOS ALAMOS NATIONAL LABORATORY   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE INJECTION LAYERS; MULTICOLOR LIGHT-EMITTING DIODES; NEUTRAL ATOM BEAMS; SEMICONDUCTOR NANOCRYSTALS;

ATOMIC BEAMS; COLOR; ELECTROLUMINESCENCE; ENCAPSULATION; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MONOLAYERS; MULTILAYERS; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; SEMICONDUCTOR MATERIALS;

LIGHT EMITTING DIODES;

GALLIUM; NITROGEN;

ARTICLE; CHEMISTRY; CRYSTALLIZATION; ENERGY TRANSFER; EQUIPMENT DESIGN; INSTRUMENTATION; LIGHT; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PHOTOCHEMISTRY; SEMICONDUCTOR; TEMPERATURE;

CRYSTALLIZATION; ENERGY TRANSFER; EQUIPMENT DESIGN; GALLIUM; LIGHT; MATERIALS TESTING; NANOTECHNOLOGY; NITROGEN; PHOTOCHEMISTRY; SEMICONDUCTORS; TEMPERATURE;

EID: 21644487234     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl050384x     Document Type: Article

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