Origin of the anomalous temperature evolution of Photoluminescence peak energy in degenerate InN nanocolumns

Optics Express

Volumn 17, Issue 14, 2009, Pages 11690-11697

  Wei, Pai Chun ^a   Chattopadhyay, Surojit ^b   Lin, Fang Sheng ^c   Hsu, Chih Ming ^d   Jou, Shyankay ^c   Chen, Tai ^e   Huang, Ping Jung ^e   Hsu, Hsu Cheng ^e   Shih, Han Chang ^a,f   Chen, Kuei Hsien ^d   Chen, Li Chyong ^e  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL YANG MING UNIVERSITY   (Taiwan)

^c NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^d INSTITUTE OF ATOMIC AND MOLECULAR SCIENCES   (Taiwan)

^e NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^f CHINESE CULTURE UNIVERSITY   (Taiwan)

Author keywords

(160.4236) Nanomaterials; (250.5230) Photoluminescence; (300.6470) Spectroscopy, semiconductors

Indexed keywords

CARRIER CONCENTRATION;

INCREASING TEMPERATURES; LATTICE DILATION; LOW CARRIER DENSITY; NANO-COLUMNS; PEAK ENERGY; PHOTOLUMINESCENCE PEAK ENERGY; QUASI-FERMI LEVEL SEPARATIONS; TEMPERATURE EVOLUTION;

PHOTOLUMINESCENCE;

INDIUM; INDIUM NITRIDE; METAL NANOPARTICLE;

ARTICLE; CHEMISTRY; EQUIPMENT DESIGN; LIGHT; LUMINESCENCE; METHODOLOGY; NANOTECHNOLOGY; PHOTOCHEMISTRY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR; SPECTROPHOTOMETRY; TEMPERATURE; TRANSMISSION ELECTRON MICROSCOPY;

EQUIPMENT DESIGN; INDIUM; LIGHT; LUMINESCENCE; METAL NANOPARTICLES; MICROSCOPY, ELECTRON, SCANNING; MICROSCOPY, ELECTRON, TRANSMISSION; NANOTECHNOLOGY; PHOTOCHEMISTRY; SEMICONDUCTORS; SPECTROPHOTOMETRY; TEMPERATURE;

EID: 67650529724     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.17.011690     Document Type: Article

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