Recent progress in group-III nitride light-emitting diodes

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 8, Issue 2, 2002, Pages 264-270

  Mukai, Takashi ^a  

^a NICHIA CORPORATION   (Japan)

Author keywords

Dislocation; Efficiency; GaN; InGaN; Light emitting diodes

Indexed keywords

DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; HETEROJUNCTIONS; LUMINESCENCE; NITRIDES; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS; ZINC;

CANDELA CLASS BLUE LIGHT EMITTING DIODES; LUMINOUS EFFICIENCY; MOLE FRACTION; NITRIDE BASED LIGHT EMITTING DIODES; THREADING DISLOCATION;

LIGHT EMITTING DIODES;

EID: 0036493220     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.999179     Document Type: Article

References (18)

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15. High-power UV InGaN/AlGaN double-heterostructure LEDs
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17. Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth