Persistent photoconductivity in n-type GaN

Applied Physics Letters

Volumn 71, Issue 8, 1997, Pages 1092-1094

  Beadie, G ^a   Rabinovich, W S ^a   Wickenden, A E ^a   Koleske, D D ^a   Binari, S C ^a   Freitas Jr , J A ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRONS; FILM GROWTH; MATHEMATICAL MODELS; PHOTOCONDUCTIVITY; PHOTOLUMINESCENCE; REACTION KINETICS; RELAXATION PROCESSES; THERMAL EFFECTS; THICK FILMS;

GALLIUM NITRIDE; HALL MEASUREMENT; PERSISTENT PHOTOCONDUCTIVITY; STRETCHED EXPONENTIAL MODEL; TEMPERATURE DEPENDENCE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031212711     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119924     Document Type: Article

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