Photoconductor gain mechanisms in GaN ultraviolet detectors

Applied Physics Letters

Volumn 71, Issue 7, 1997, Pages 870-872

  Munoz E ^a   Monroy, E ^a   Garrido, J A ^a   Izpura, I ^a   Sanchez F J ^a   Sanchez Garcia M A ^a   Calleja, E ^a   Beaumont, B ^b   Gibart, P ^b  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^b CRHEA CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; LIGHT MODULATION; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; OPTICAL VARIABLES MEASUREMENT; PHOTOCONDUCTING DEVICES; PHOTOCONDUCTIVITY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON; SUBSTRATES;

GAS SOURCE MOLECULAR BEAM EPITAXY; HALL MEASUREMENTS; PHOTOCONDUCTANCE MEASUREMENTS; PHOTOLUMINESCENCE MEASUREMENTS;

PHOTODETECTORS;

EID: 0031211840     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119673     Document Type: Article

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