Study of photocurrent properties of GaN ultraviolet photoconductor grown on 6H-SiC substrate

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 2 A, 1999, Pages 767-769

  Shen, Bo ^a   Yang, Kai ^a   Zang, Lan ^a   Chen, Zhi Zhong ^a   Zhou, Yu Gang ^a   Chen, Peng ^a   Zhang, Rong ^a   Huang, Zheng Chun ^b   Zhou, Hao Shen ^c   Zheng, You Dou ^a  

^a NANJING UNIVERSITY   (China)

^b NASA GODDARD SPACE FLIGHT CENTER   (United States)

^c ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

GaN; Photocurrent; Response time; Responsivity; Ultraviolet detector

Indexed keywords

EID: 0000424064     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.767     Document Type: Article

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