Electrically excited infrared emission from InN nanowire transistors

Nano Letters

Volumn 7, Issue 8, 2007, Pages 2276-2280

  Chen, Jia ^a   Cheng, Guosheng ^b   Stern, Eric ^b   Reed, Mark A ^b   Avouris, Phaedon ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b Yale University

Author keywords

[No Author keywords available]

Indexed keywords

EXCITED STATES; INFRARED RADIATION; NANOWIRES; SEMICONDUCTING INDIUM COMPOUNDS; TRANSISTORS;

CARRIER RELAXATION RATE; CONDUCTION-BAND HOT-CARRIER EMISSION;

LIGHT EMISSION;

INDIUM; INDIUM NITRIDE; NANOTUBE; UNCLASSIFIED DRUG;

ARTICLE; CHEMISTRY; ELECTRICITY; ELECTROCHEMISTRY; ELECTROMAGNETIC FIELD; EQUIPMENT; EQUIPMENT DESIGN; EVALUATION; ILLUMINATION; INFRARED RADIATION; INSTRUMENTATION; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; RADIATION EXPOSURE; SEMICONDUCTOR; ULTRASTRUCTURE;

ELECTRIC WIRING; ELECTROCHEMISTRY; ELECTROMAGNETIC FIELDS; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; INDIUM; INFRARED RAYS; LIGHTING; NANOTECHNOLOGY; NANOTUBES; PARTICLE SIZE; TRANSISTORS;

EID: 34548219421     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl070852y     Document Type: Article

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