Electronic conduction in GaN nanowires

Applied Physics Letters

Volumn 88, Issue 7, 2006, Pages

  Simpkins, B S ^a   Pehrsson, P E ^a   Laracuente, A R ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTIVITY MECHANISMS; DEVICE PARAMETERS; GAN NANOWIRES (NW); IMPURITY BAND CONDUCTION;

ELECTRIC CONDUCTIVITY; FIELD EFFECT TRANSISTORS; MATHEMATICAL MODELS; NANOSTRUCTURED MATERIALS; SCANNING TUNNELING MICROSCOPY; THRESHOLD VOLTAGE; VOLTAGE MEASUREMENT;

GALLIUM NITRIDE;

EID: 32944464338     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2177629     Document Type: Article

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