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Volumn 241, Issue 12, 2004, Pages 2802-2805

Formation of InGaN nanorods with indium mole fractions by hydride vapor phase epitaxy

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); LIGHT EMITTING DIODES; LIGHT SOURCES; PHOSPHORS; PHOTONS; THERMAL EXPANSION; VAPOR PHASE EPITAXY;

EID: 7044220493     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssb.200405043     Document Type: Conference Paper
Times cited : (25)

References (9)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.