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Volumn 281, Issue 2-4, 2005, Pages 328-333

Field emission properties of self-assembled InN nano-structures: Effect of Ga incorporation

Author keywords

A1. Nanostructures; A3. Metalorganic chemical vapor deposition; B2. Semiconducting III V materials

Indexed keywords

CURRENT DENSITY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOEMISSION; SELF ASSEMBLY; SEMICONDUCTOR MATERIALS; SURFACE ROUGHNESS; THIN FILMS; VACUUM;

EID: 22144451158     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.04.065     Document Type: Article
Times cited : (11)

References (27)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.