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Volumn 231, Issue 3, 2001, Pages 357-365

Growth of GaN nanowires by direct reaction of Ga with NH3

(8) He, Maoqi a Zhou, Peizhen a Mohammad, S Noor a Harris, Gary L a Halpern, Joshua B a Jacobs, Randy b Sarney, Wendy L b Salamanca Riba, Lourdes b

a HOWARD UNIVERSITY (United States)

b UNIVERSITY OF MARYLAND (United States)

Author keywords

A3. Chemical vapor deposition processes; B1. Gallium compounds; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

AMORPHOUS MATERIALS; CHEMICAL VAPOR DEPOSITION; GALLIUM NITRIDE; NANOSTRUCTURED MATERIALS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS;

NANOWIRES;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0035480365 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)01466-X Document Type: Conference Paper

Times cited : (119)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.