Franz-Keldysh effect in GaN nanowires

Nano Letters

Volumn 7, Issue 7, 2007, Pages 2166-2170

  Cavallini, A ^a   Polenta, L ^a   Rossi, M ^a   Stoica, T ^b   Calarco, R ^b   Meijers, R J ^b   Richter, T ^b   Luth H ^b  

^a UNIVERSITY OF BOLOGNA   (Italy)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC FIELD EFFECTS; GALLIUM NITRIDE; MATHEMATICAL MODELS;

CYLINDRICAL MODEL; INTERNAL ELECTRIC FIELD;

NANOWIRES;

EID: 34547571847     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl070954o     Document Type: Article

References (34)

1. Greytak, A.; Lauhon, L.; Gudiksen, M.; Lieber, C. Appl. Phys. Lett. 2004, 84, 4176.
2. Duan, X.; Huang, Y.; Agarwal, R.; Lieber, C. Nature 2003, 421, 241.
3. Zhong, Z.; Wang, D.; Cui, Y.; Bockrath, M.; Lieber, C. Science 2003, 302, 1377.
4. Bjork, M.; Ohlsson, B.; Thelander, C.; Persson, A.; Deppert, K.; Wallenberg, L.; Samuelson, L. Appl. Phys. Lett. 2002, 81, 4458.
5. Bjork, M.; Ohlsson, B.; Sass, T.; Persson, A.; Thelander, C.; Magnusson, M.; Deppert, K.; Wallenberg, L.; Samuelson, L. Appl. Phys. Lett. 2002, 80, 1058.
6. Meijers, R.; Richter, T.; Calarco, R.; Stoica, T.; Bochem, H.-P.; Marso, M.; Lüth, H. J. Cryst. Growth 2006, 289, 381.
7. Calarco, R.; Marso, M.; Richter, T.; Aykanat, A. I.; Meijers, R.; v. d. Hart, A.; Stoica, T.; Lüth, H. Nano Lett. 2005, 5, 981.
8. Sánchez-Páramo, J.; Calleja, J.; Sánchez-Garcia, M.; Calleja, E.; Jahn, U. Physica E 2002, 13, 1070.
9. Calleja, E.; Sánchez-Garcia, M.; Sánchez, F.; Calle, F.; Naranjo, F.; Muñoz, E.; Jahn, U.; Ploog, K. Phys. Rev. B 2000, 62, 16826.
10. Ristic, J.; Calleja, E.; Sánchez-Garcia, M.; Ulloa, J.; Sánchez-Páramo, J.; Calleja, J.; Jahn, U.; Trampert, A.; Ploog, K. Phys. Rev. B 2003, 68, 125305.
11. Kronik, L.; Shapira, Y. Surf. Interface Anal. 2001, 31, 954-965.
12. Bube, R. H. Photoconductivity of Solids; Wiley: New York, 1960.
13. Adamowicz, B.; Szuber, J. Surf. Sci. 1991, 247, 94.
14. Litovchenko, V. G.; Popov, V. G. Sov. Phys. Semicond. 1982, 16, 472.
15. Kalnitsky, A.; Zukotynski, S.; Sumski, S. J. Appl. Phys. 1981, 52, 4744.
16. Kronik, L.; Shapira, Y. Surf. Sci. Rep. 2001, 31, 954-1265.
17. Edgar, J. H. Properties of Group III Nitrides; INSPEC, The Institution of Electrical Engineeers: London, 1994.
18. Gal, D.; Mastai, Y.; Hodes, G.; Kronik, L. J. Appl. Phys. 1999, 86, 5573.
19. Ambacher, O.; Rieger, W.; Ansmann, P.; Angerer, T. H.; Moustakas, D.; Stutzman, M. Solid State Commun. 1996, 97, 365-370.
20. Gu, Y.; Kwak, E. S.; Lensch, J. L.; Allen, J. E.; Odom, T. W.; Lauhon, L. J. Appl. Phys. Lett. 2005, 87, 043111.
21. Cavallini, A.; Polenta, L.; Rossi, M.; Richter, T.; Marso, M.; Meijers, R.; Calarco, R.; Luth, H. Nano Lett. 2006, 6, 1548-155.
22. Pankove, J. I. Optical Process in Semiconductors; Dover: New York, 1975.
23. Sutter, E.; Sutter, P.; Calarco, R.; Stoica, T.; Meijers, R. Appl. Phys. Lett. 2007, 90, 093118.
24. Popescu, C.; Stoica, T. Phys. Rev. B 1992, 46, 15063.
25. Franz, W. Z. Naturforsch. 1958, 13, 484.
26. Keldysh, L. V. Sov. Phys. JETP 1958, 7, 788.
27. Duke, C. B.; Alferieff, M. E. Phys. Rev. B 1966, 145, 2.
28. Dow, J. D.; Redfield, D. Phys. Rev. B 1970, 1, 3358.
29. Haug, H.; Koch, S. W. Quantum Theory of the Optical and Electronic Properties of Semiconductors; World Scientific Publishing: River Edge, NJ, 1994; p 343.
30. Peng, H. Y.; McCluskey, M. D.: Gupta, Y. M.; Kneissl, M.; Johnson, N. M. Appl. Phys. Lett. 1989, 82, 2085.
31. Pankove, J. I.; Moustakas, T. D. Semiconductors and Semimetals-Gallium Nitride (GaN) I; Academic Press: New York, 1998; p 313.
32. Segev, D.; Van de Walle, C. G. Europhys. Lett. 2006, 76, 305.
33. Kočan, M.; Rizzi, A.; Lüth, H.; Keller, S.; Mishra, U. K. Phys. Status Solidi B 2002, 234, 773.
34. Van de Walle, C. G.; Segev, D. J. Appl. Phys. 2007, 101, 081704.