Mechanism of nanoblister formation in Ga+ self-ion implanted GaN nanowires

Applied Physics Letters

Volumn 86, Issue 20, 2005, Pages 1-3

  Dhara, S ^a,e   Datta, A ^a,f   Wu, C T ^a   Chen, K H ^a   Wang, Y L ^a   Muto, S ^b   Tanabe, T ^b   Shen, C H ^c   Hsu, C W ^c   Chen, L C ^c   Maruyama, T ^d  

^a INSTITUTE OF ATOMIC AND MOLECULAR SCIENCES   (Taiwan)

^b NAGOYA UNIVERSITY   (Japan)

^c NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^d Wakasawan Energy Research Center   (Japan)

^e INDIRA GANDHI CENTRE FOR ATOMIC RESEARCH   (India)

^f Netaji Nagar College for Women   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CATALYSTS; ELECTRON ENERGY LOSS SPECTROSCOPY; EMBRITTLEMENT; GALLIUM; HIGH RESOLUTION ELECTRON MICROSCOPY; IMAGING TECHNIQUES; ION BEAMS; ION IMPLANTATION; NANOSTRUCTURED MATERIALS; POSITIVE IONS; TRANSMISSION ELECTRON MICROSCOPY;

FOCUSED ION BEAMS (FIB); NANOBLISTERS; NANOWIRES; PLASMON IMAGING;

GALLIUM NITRIDE;

EID: 20844435786     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1931819     Document Type: Article

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