Growth of GaN nanorods by a hydride vapor phase epitaxy method

Advanced Materials

Volumn 14, Issue 13-14, 2002, Pages 991-993

  Kim, H M ^a   Kim, D S ^a   Park, Y S ^a   Kim, D Y ^a   Kang, T W ^a   Chung, K S ^b  

^a Dongguk University   (South Korea)

^b Kyung Hee University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CATALYSTS; CHARACTERIZATION; CRYSTAL STRUCTURE; ENERGY DISPERSIVE SPECTROSCOPY; GALLIUM NITRIDE; LOW TEMPERATURE EFFECTS; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTOR GROWTH; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; ULTRAVIOLET RADIATION; VAPOR PHASE EPITAXY; X RAY DIFFRACTION ANALYSIS;

HYDRIDE VAPOR PHASE EPITAXY (HVPE); NANORODS;

NANOSTRUCTURED MATERIALS;

EID: 0037019380     PISSN: 09359648     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-4095(20020705)14:13/14<991::AID-ADMA991>3.0.CO;2-L     Document Type: Article

References (13)