Gan/AIGan heterostructure devices: Photodetectors and field-effect transistors

MRS Bulletin

Volumn 22, Issue 2, 1997, Pages 44-50

  Shur, Michael S ^a   Khan, M Asif ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRANSPORT PROPERTIES; ENERGY GAP; FIELD EFFECT TRANSISTORS; HETEROJUNCTIONS; MONTE CARLO METHODS; PHOTODETECTORS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; THERMAL CONDUCTIVITY OF SOLIDS;

ALUMINUM GALLIUM NITRIDE; GALLIUM NITRIDE; MATERIALS PARAMETERS;

SEMICONDUCTOR DEVICES;

EID: 0031069650     PISSN: 08837694     EISSN: None     Source Type: Journal    
DOI: 10.1557/S0883769400032565     Document Type: Article

References (36)

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