On-chip fabrication of well-aligned and contact-barrier-free GaN nanobridge devices with ultrahigh photocurrent responsivity

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Volumn 4, Issue 7, 2008, Pages 925-929

  Chen, Reui San ^b   Wang, Shiao Wen ^a,c   Lan, Zon Huang ^b   Tsai, Jeff Tsung Hui ^b   Wu, Chien Ting ^b   Chen, Li Chyong ^a   Chen, Kuei Hsien ^b   Huang, Ying Sheng ^d   Chen, Chia Chun ^c  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b INSTITUTE OF ATOMIC AND MOLECULAR SCIENCES   (Taiwan)

^c NATIONAL TAIWAN NORMAL UNIVERSITY   (Taiwan)

^d NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Gallium nitride; Nanobridges; Nanowires photoconductivity; Responsivity

Indexed keywords

CARBON NANOTUBES; CHEMICAL VAPOR DEPOSITION; CORUNDUM; ELECTRIC WIRE; GALLIUM NITRIDE; METALLIZING; OPTICAL DESIGN; PHOTOCURRENTS; REACTIVE ION ETCHING; SAPPHIRE; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTING GALLIUM; SPUTTER DEPOSITION;

AU CATALYSTS; BARRIER-FREE; CHEMICAL VAPOR DEPOSITION (CCVD); NANO BRIDGES; ON CHIPS; REACTIVE ION ETCHING (REI); RESPONSIVITY; SAPPHIRE SUBSTRATES; WELL-ALIGNED;

GALLIUM ALLOYS;

GALLIUM; GALLIUM NITRIDE; METAL NANOPARTICLE; NANOWIRE;

ARTICLE; CHEMISTRY; ELECTRIC CONDUCTIVITY; ELECTROCHEMISTRY; EQUIPMENT DESIGN; LIGHT; METHODOLOGY; MICROSCOPY; NANOTECHNOLOGY; PHOTOCHEMISTRY; ULTRAVIOLET RADIATION;

ELECTRIC CONDUCTIVITY; ELECTROCHEMISTRY; EQUIPMENT DESIGN; GALLIUM; LIGHT; METAL NANOPARTICLES; MICROSCOPY; NANOTECHNOLOGY; NANOWIRES; PHOTOCHEMISTRY; ULTRAVIOLET RAYS;

EID: 48249145188     PISSN: 16136810     EISSN: 16136829     Source Type: Journal    
DOI: 10.1002/smll.200701184     Document Type: Article

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