Enhanced dynamic annealing in Ga+ ion-implanted GaN nanowires

Applied Physics Letters

Volumn 82, Issue 3, 2003, Pages 451-453

  Dhara, S ^a,d   Datta, A ^a,e   Wu, C T ^a   Lan, Z H ^a   Chen, K H ^a   Wang, Y L ^a,b   Chen, L C ^b   Hsu, C W ^c   Lin, H M ^c   Chen, C C ^c  

^a INSTITUTE OF ATOMIC AND MOLECULAR SCIENCES   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^c NATIONAL TAIWAN NORMAL UNIVERSITY   (Taiwan)

^d INDIRA GANDHI CENTRE FOR ATOMIC RESEARCH   (India)

^e Netaji Nagar College for Women   (India)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; ANNEALING; CHEMICAL VAPOR DEPOSITION; ION BEAMS; ION IMPLANTATION; POINT DEFECTS; THIN FILMS;

NANOWIRES (NW);

GALLIUM NITRIDE;

EID: 0037455247     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1536250     Document Type: Article

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