Gallium nitride nanorods fabricated by inductively coupled plasma reactive ion etching

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 41, Issue 8 B, 2002, Pages

  Yu, Chang Chin ^a   Chu, Chen Fu ^a   Tsai, Juen Yen ^a   Huang, Hung Wen ^a   Hsueh, Tao Hung ^a   Lin, Chia Feng ^a   Wang, Shing Chung ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Gallium nitride (GAN); Inductively coupled plasma (ICP); Nanorod

Indexed keywords

EPITAXIAL GROWTH; INDUCTIVELY COUPLED PLASMA; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOSTRUCTURED MATERIALS; OPTOELECTRONIC DEVICES; REACTIVE ION ETCHING; SAPPHIRE;

EPITAXIAL FILMS;

GALLIUM NITRIDE;

EID: 0037104473     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.l910     Document Type: Article

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