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Volumn 44, Issue 3, 2000, Pages 465-470

Photocurrent spectroscopy of GaN and AlGaN epilayers grown on 6H (0001) silicon carbide

(17) Devittorio, M a Coli, G a Rinaldi, R a Gigli, G a Cingolani, R a De Salvador, D b Berti, M b Drigo, A b Fucilli, F c Ligonzo, T c Augelli, V c Rizzi, A d Lantier, R e Freundt, D e Luth, H e Neubauer, B f Gerthsen, D f

a UNIVERSITY OF SALENTO (Italy)

b UNIVERSITY OF PADOVA (Italy)

c UNIVERSITY OF BARI (Italy)

d UNIVERSITY OF MODENA AND REGGIO EMILIA (Italy)

e FORSCHUNGSZENTRUM JÜLICH (Germany)

f UNIVERSITY OF KARLSRUHE (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; EPITAXIAL GROWTH; EXCITONS; MULTILAYERS; PHOTOLUMINESCENCE; POINT DEFECTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SILICON CARBIDE; SPECTROSCOPY; SUBSTRATES; THERMAL EFFECTS;

EPILAYERS; PHOTOCURRENT SPECTROSCOPY; TEMPERATURE DEPENDENT PHOTOLUMINESCENCE;

PHOTOCURRENTS;

EID: 0034159182 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/S0038-1101(99)00249-X Document Type: Article

Times cited : (6)

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