Current transport models for nanoscale semiconductor devices

Materials Science and Engineering R: Reports

Volumn 58, Issue 6, 2008, Pages 228-270

  Sverdlov, V ^a   Ungersboeck, E ^a   Kosina, H ^a   Selberherr, S ^a  

^a INSTITUTE FOR MICROELECTRONICS   (Austria)

Author keywords

Carrier transport model; Monte Carlo simulation; Non equilibrium Green's function; Six moments model; TCAD tools; Wigner equation

Indexed keywords

COMPUTER AIDED DESIGN; COMPUTER SIMULATION; GREEN'S FUNCTION; MATHEMATICAL MODELS; QUANTUM THEORY; TRANSPORT PROPERTIES;

CARRIER TRANSPORT MODELS; DENSITY MATRIX; WIGNER EQUATIONS;

MOSFET DEVICES;

EID: 36549027352     PISSN: 0927796X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mser.2007.11.001     Document Type: Review

References (255)

1. International technology roadmap for semiconductors: 2005 edition, http://www.itrs.net/Common/2005ITRS/Home2005.htm, 2005.
2. Doris B., Ieong M., Kanarsky T., Zhang Y., Roy R.A., Documaci O., Ren Z., Jamin F.-F., Shi L., Natzle W., Huang H.-J., Mezzapelle J., Mocuta A., Womack S., Gribelyuk M., Jones E.C., Miller R.J., Wong H.-S.P., and Haensch W. IEDM Techn. Dig. (2002) 267-270
3. Selberherr S. Analysis and Simulation of Semiconductor Devices (1984), Springer, Wien, New York
4. Ando T., Fowler A.B., and Stern F. Rev. Modern Phys, 54 2 (1982) 437-672
5. Haensch W., Novak E.J., Dennard R.H., Solomon P.M., Bryant A., Documaci O.H., Kumar A., Wang X., Johnson J.B., and Fischetti M.V. IBM J. Res. Dev. 50 4/5 (2006) 339-361
6. Fossum J.G. Solid-State Electron. (2007) 188-194
7. Sverdlov V.A., Walls T.J., and Likharev K.K. IEEE Trans. Electron Devices 50 9 (2003) 1926-1933
8. Palestri P., Esseni D., Eminente S., Fiegna C., Sangiorgi E., and Selmi L. IEEE Trans. Electron Devices 52 12 (2005) 2727-2735
9. Gilbert M., Akis R., and Ferry D. Phonon-assisted ballistic to diffusive crossover in silicon nanowire transistors. J. Appl. Phys. 98 9 (2005) p. 094303-1-8
10. Gummel H. IEEE Trans. Electron Devices ED-11 (1964) 455-465
11. DeMari A. Solid-State Electron. 11 (1968) 33-58
12. Scharfetter D., and Gummel H. IEEE Trans. Electron Devices 16 1 (1969) 64-77
13. Loeb H., Andrew R., and Love W. Electron. Lett. 4 (1968) 352-354
14. Schroeder J., and Muller R. IEEE Trans. Electron Devices ED-15 12 (1968) 954-961
15. Kennedy D. Proc. IEEE 54 6 (1969) 1202-1203
16. Slotboom J. Electron. Lett. 5 (1969) 677-678
17. Lundstrom M. Fundamentals of Carrier Transport (2000), Cambridge University Press, Cambridge
18. Datta S. Quantum Transport: Atom to Transistor (2005), Cambridge University Press, Cambridge
19. ATLAS User's Manual, Silvaco, 2007.
20. TAURUS MEDICI User's Manual, Synopsys, 2007.
21. DESSIS 9.0 User's Manual, Synopsys, 2007.
22. Online simulations and more, http://www.nanohub.org, 2007.
23. MINIMOS-NT 2.1 User's Guide, Institut für Mikroelektronik, Technische Universität Wien, Austria, 2004.
24. Trellakis A., Zibold T., Andalauer T., Smith S.B.A.K., Morschal R., and Vogl P. Proc. IWCE. Wien (2006) 173-174
25. Kadanoff L.P., and Baym G. Quantum Statistical Mechanics (1962), W.A. Benjamin, New York
26. Bløtekjaer K. IEEE Trans. Electron Devices 17 1 (1970) 38-47
27. Stratton R. Phys. Rev. 126 6 (1962) 2002-2014
28. Grasser T., Kosina H., Heitzinger C., and Selberherr S. J. Appl. Phys. 91 6 (2002) 3869-3879
29. Gehring A., Grasser T., Kosina H., and Selberherr S. J. Appl. Phys. 92 10 (2002) 6019-6027
30. Gritsch M., Kosina H., Grasser T., and Selberherr S. Solid-State Electron. 45 4 (2001) 621-627
31. M. Gritsch, Numerical modeling of SOI MOSFETs, Dissertation, Technische Universität Wien, http://www.iue.tuwien.ac.at/phd/gritsch, 2002.
32. Gritsch M., Kosina H., Grasser T., and Selberherr S. IEEE Trans. Electron Devices 49 10 (2002) 1814-1820
33. Grasser T., Kosina H., and Selberherr S. Intl. J. High Speed Electron. 13 3 (2003) 873-901
34. Kosina H., and Selberherr S. Intl. J. High Speed Electron. 16 1 (2006) 115-136
35. Grasser T., Kosik R., Jungemann C., Kosina H., and Selberherr S. J. Appl. Phys. 97 9 (2005) 0937101-09371012
36. Sonoda K.-I., Yamaji M., Taniguchi K., Hamaguchi C., and Dunham S.T. J. Appl. Phys. 80 9 (1996) 5444-5448
37. Grasser T., Kosina H., and Selberherr S. J. Appl. Phys 90 12 (2001) 6165-6171
38. Abdel-Motaleb I.M., and korotkov R.Y. J. Appl. Phys. 97 (2005) 03715-1-6
39. Vitanov S., Palankovski V., Murad S., Rödle T., Quay R., and Selberherr S. Proc. Intl. Conf. on Simulation of Semiconductor Processes and Devices (2007) 273-276
40. Ma L., Jin Y.-W., Zeng C., and Barlage D.W. Proc. Intl. Semiconductor Device Research Symposium (2005) 338-339
41. Sijercic E., and Pejcinovic B. Proc. Intl. Conference Applied Electromagnetics and Communications (2005) 1-4
42. Grasser T., Jungemann C., Kosina H., Meinerzhagen B., and Selberherr S. Proc. Intl. Conf. on Simulation of Semiconductor Processes and Devices (2004) 1-8
43. Tang T., Ramaswamy R., and Nam J. IEEE Trans. Electron devices 40 8 (1993) 1469-1477
44. Grasser T., Kosina H., Gritsch M., and Selberherr S. J. Appl. Phys. 90 5 (2001) 2389-2396
45. Laux S.E., and Lomax R.J. IEEE Trans. Electron Devices (1981) 120-122
46. Duane M. IEICE Trans. Electron. 82-C 6 (1999) 976-982
47. Tang T.-W. IEEE Trans. Electron Devices 31 (1984) 1912-1914
48. C.C. McAndrew, K. Singhal, E.L. Haesell, IEEE Electron Device Lett. 6 (1985) 446-447.
49. Forgieri A., Guerrieri R., Ciamolini P., Gnudi A., Rudan M., and Baccarani G. IEEE Trans. Computer-Aided Design 7 (1988) 231-242
50. Choi W.-S., Ahn J.-G., Park Y.-J., Min H.-S., and Hwang G.-G. IEEE Trans. Computer-Aided Design 13 (1994) 899-908
51. Tang T.-W., and Ieong M.-K. IEEE Trans. Computer-Aided Design 14 (1995) 1309-1315
52. Hänsch W. The Drift Diffusion Equation and its Applications in MOSFET Modeling (1991), Springer, Wien, New York
53. Grasser T. Physica A 349 (2005) 221-258
54. Welser J., Hoyt J., and Gibbons J. IEDM Techn. Dig. (1992) 1000-1002
55. Balslev I. Phys. Rev. 143 (1966) 636-647
56. Manku T., and Nathan A. IEEE Trans. Electron Devices 39 9 (1992) 2082-2089
57. Egley J., and Chidambarao D. Solid-State Electron. 36 12 (1993) 1653-1664
58. Dhar S., Kosina H., Palankovski V., Ungersboeck E., and Selberherr S. IEEE Trans. Electron Devices 52 4 (2005) 527-533
59. Jacoboni C., and Reggiani L. Rev. Modern Phys. 55 3 (1983) 645-705
60. Smith H., and Wilkins J.W. Phys. Rev. Lett. 24 5 (1970) 221-225
61. Dhar S., Ungersboeck E., Kosina H., Grasser T., and Selberherr S. IEEE Trans. Nanotechnol. 6 1 (2007) 97-100
62. Luttinger J.M., and Kohn W. Phys. Rev. 97 4 (1955) 869-883
63. Fischetti M.V., Ren Z., Solomon P.M., Yang M., and Rim K. J. Appl. Phys. 94 2 (2003) 1079-1095
64. Jacoboni C., and Lugli P. The Monte Carlo Method for Semiconductor Device Simulation (1989), Springer, Wien, New York
65. Hockney R., and Eastwood J.W. Computer Simulation Using Particles (1988), Adam Hilger, Bristol and Philadelphia
66. Moglestue C. Comput. Methods Appl. Mech. Eng (1982) 173-208
67. Price P.J. Semicond. Semimet. 14 (1979) 249-308
68. Jacoboni C., Poli P., and Rota L. Solid-State Electron. 31 3/4 (1988) 523-526
69. Nedjalkov M., and Vitanov P. Solid-State Electron. 32 10 (1989) 893-896
70. Kosina H., Nedjalkov M., and Selberherr S. A stable backward Monte Carlo method for the solution of the Boltzmann equation, in: Lecture Notes in Computer Science 2907: Large-Scale Scientific Computing (2003), Springer Verlag 170-177
71. Kosina H., Nedjalkov M., and Selberherr S. IEEE Trans. Electron Devices 47 10 (2000) 1899-1908
72. Kurosawa T. Proc. Intl. Conf. on Physics of Semiconductors (1966) 424-426
73. Fawcett W., Boardman A., and Swain S. J. Phys. Chem. Solids 31 (1970) 1963-1990
74. Fawcett W., and Paige E. J. Phys. C: Solid State Physics 4 (1971) 1801-1821
75. Canali C., Jacoboni C., Nava F., Ottaviani G., and Quaranta A. Phys. Rev. B 12 4 (1975) 2265-2284
76. Jacoboni C., Minder R., and Majni G. J. Phys. Chem. Solids 36 (1975) 1129-1133
77. Shichijo H., and Hess K. Phys. Rev. B 23 8 (1981) 4197-4207
78. Fischetti M.V., and Laux S.E. Phys. Rev. B 38 14 (1988) 9721-9745
79. Kunikiyo T., Takenaka M., Kamakura Y., Yamaji M., Mizuno H., Morifuji M., Taniguchi K., and Hamaguchi C. J. Appl. Phys. 75 1 (1994) 297-312
80. Yoder P., Higman J., Bude J., and Hess K. Semicond. Sci. Technol. 7 3B (1992) 357-359
81. Fischetti M., and Laux S. Proc. European Solid-State Device Research Conf. (1996) 813-820
82. Yoder P.D., Natoli V.D., and Martin R.M. J. Appl. Phys. 73 9 (1993) 4378-4383
83. Fischetti M.V., Gámiz F., and Hänsch W. J. Appl. Phys. 92 12 (2002) 7320-7324
84. Jungemann C., and Meinerzhagen B. Hierarchical Device Simulation (2003), The Monte Carlo Perspective, Springer
85. Vienna Monte Carlo 2.0 User's Guide, Institut für Mikroelektronik, http://www.iue.tuwien.ac.at/software, Technische Universität Wien, Austria, 2006.
86. Fischetti M.V., and Laux S.E. J. Appl. Phys. 80 4 (1996) 2234-2252
87. Fischetti M.V., and Laux S.E. Proc. 26th European Solid State Device Research Conference (1996) 813-820
88. Dhar S., Kosina H., Karlowatz G., Ungersboeck E., Grasser T., and Selberherr S. IEEE Trans. Electron Devices 53 12 (2006) 3054-3062
89. Smith C.S. Phys. Rev. 94 1 (1954) 42-49
90. E. Ungersboeck, S. Dhar, G. Karlowatz, V. Sverdlov, H. Kosina, S. Selberherr, IEEE Trans. Electron Devices.
91. Sverdlov V., Ungersboeck E., Kosina H., and Selberherr S. Proc. EUROSOI (2007) 39-40
92. Karlowatz G., Wessner W., and Kosina H. 5th Mathmod Vienna Proceedings (ISBN: 3-901608-30-3) (2006) 4-1-46-46
93. S.E. Laux, IBM Research Report, RC 20101 Enginnering and Technology), 1995, pp. 1-37.
94. Likharev K.K. Advanced Semiconductor and Organic Nano-Techniques (2003), Academic Press, New York 239-302
95. Bosi S., and Jacoboni C. J. Phys. C:Solid State Phys. 9 (1976) 315-319
96. Lugli P., and Ferry D.K. IEEE Trans. Electron Devices 32 11 (1985) 2431-2437
97. Lucci L., Palestri P., Esseni D., and Selmi L. IEDM Techn. Dig. (2005) 531-534
98. Ungersboeck E., and Kosina H. Proc. Intl. Conf. on Simulation of Semiconductor Processes and Devices (2005) 311-314
99. Smirnov S., Kosina H., Nedjalkov M., and Selberherr S. J. Appl. Phys. 94 9 (2003) 5791-5799
100. Sverdlov V., Ungersboeck E., Kosina H., and Selberherr S. Solid-State Electron. 51 2 (2007) 299-305
101. Jungemann C., Pham A.T., and Meinerzhagen B. Proc. IWCE. Wien (2006) 13-14
102. Reggiani L., Lugli P., Gantsevich S., Gurevich V., and Katilius R. Phys. Rev. B 40 18 (1989) 12209-12214
103. Takagi S.I., Toriumi A., Iwase M., and Tango H. IEEE Trans. Electron Devices 41 12 (1994) 2357-2362
104. Balestra F., Cristoloveanu S., Benachir M., Brini J., and Elewa T. IEEE Electron Device Lett. 8 9 (1987) 410-412
105. Tsutsui G., Saitoh M., Saraya T., Nagumo T., and Hiramoto T. IEDM Techn. Dig. (2005) 747-750
106. Uchida K., Koga J., and Takagi S. IEDM Techn. Dig. (2003) 805-808
107. van Dort M.J., Woerlee P.H., and Walker A.J. Solid-State Electron. 37 3 (1994) 411-414
108. Jungemann C., Nguyen C.D., Neinhüs B., Decker S., and Meinerzhagen B. Proc. Intl. Conf. Modeling and Simulation of Microsystems (2001) 458-461
109. Nguyen C.D., Jungemann C., and Meinerzhagen B. Proc. Nanotechnol. 3 (2005) 33-36
110. Hänsch W., Vogelsang T., Kircher R., and Orlowski M. Solid-State Electron. 32 10 (1989) 839-849
111. Paasch G., and Übensee H. Phys. Stat. Sol. (b) 118 1 (1983) 255-266
112. Wagner M., Karner M., and Grasser T. Proc. of the XIII Intl. Workshop on Semiconductor Devices (2005) 458-459
113. Wagner M., Karner M., Grasser T., and Kosina H. Proc. IWCE. Wien (2006) 87-88
114. Karner M., Wagner M., Grasser T., and Kosina H. Proc. MRS Spring Meeting. San Francisco (2006) 104-105
115. Sverdlov V., Gehring A., Kosina H., and Selberherr S. Solid-State Electron. 49 9 (2005) 1510-1515
116. Stern F. Phys. Rev. B 5 12 (1972) 4891-4899
117. Vienna Schrödinger-Poisson Solver 1.0 User's Guide, Institut für Mikroelektronik, http://www.iue.tuwien.ac.at/software, Technische Universität Wien, Austria, 2007.
118. Ferry D., Akis R., and Vasileska D. IEDM Tech. Dig. (2000) 287-290
119. Vasileska D., Ferry D., and Goodnick S. Handbook of Theoretical and Computational Nanotechnology, Vol. 10 (2006), American Scientific Publishers, Los Angeles pp. 1-135 (Chapter 1. Computational nanoelectronics)
120. Iafrate G.J., Grubin H.L., and Ferry D.K. J. Phys. 42 (1981) 307-312
121. Kathawala G., Winstead B., and Ravaioli U. IEEE Trans. Electron Devices 50 12 (2003) 2467-2473
122. Aubry-Fortuna V., Dollfus P., and Galdin-Retailleau S. Solid-State Electron. 49 8 (2005) 1320-1329
123. Krishnamohan T., Jungemann C., Kim D., Ungersboeck E., Selberherr S., Wong P., Nishi Y., and Saraswat K. IEDM Tech. Dig. (2006) 937-940
124. Fan X.F., Register L.F., Winstead B., Foisy M.C., Chen W.Q., Zheng X., Ghosh B., and Banerjee S.K. IEEE Trans. Electron Devices 54 2 (2007) 291-296
125. Bufler F.M., Hudé R., and Erlebach A. Proc. IWCE. Wien (2006) 101-102
126. Palestri P., Eminente S., Esseni D., Fiegna C., Sangiorgi E., and Selmi L. Solid-State Electron. 49 (2005) 727-732
127. Ancona M.G., and Tiersten H.F. Phys. Rev. B 39 13 (1989) 9536-9540
128. Ancona M.G. Phys. Rev. B 42 2 (1990) 1222-1233
129. Ancona M.G., Yu Z., Dutton R.W., Voorde P.J.V., Cao M., and Vook D. Proc. Intl. Conf. on Simulation of Semiconductor Processes and Devices (1999) 235-238
130. Ancona M.G., Yu Z., Dutton R.W., Voorde P.J.V., Cao M., and Vook D. IEEE Trans. Electron Devices 47 12 (2000) 2310-2319
131. Asenov A., Brown A.R., and Watling J.R. Solid-State Electron. 47 7 (2003) 1141-1145
132. Jungel A. Quasi-hydrodynamic semiconductor equations, Vol. 41 of Progress in Nonlinear Differential Equations and Their Applications (2001), Birkhauser
133. Ancona M.G. Proc. IWCE. Wien (2006) 9-10
134. Hoehr T., Schenk A., Wettstein A., and Fichtner W. Proc. Simulation of Semiconductor Processes and Devices (2002) 275-278
135. Natori K. J. Appl. Phys. 76 8 (1994) 4879-4890
136. Naveh Y., and Likharev K.K. IEEE Electron Device Lett. 21 5 (2000) 242-244
137. Laux S., Kumar A., and Fischetti M. IEEE Trans. Nanotechnol. 1 4 (2002) 255-259
138. Heinz F., Schenk A., Scholze A., and Fichtner W. J. Comput. Electron. 1 1 (2002) 161-164
139. Curatola G., Fiori G., and Iannaccone G. Solid-State Electron. 48 4 (2004) 581-587
140. Wang J., Polizzi E., Ghosh A., Datta S., and Lundstrom M. J. Appl. Phys. (2005) 0431011-0431013
141. Walls T.J., Sverdlov V.A., and Likharev K.K. Solid-State Electron. 48 (2004) 857-865
142. Lent C., and Kirkner D. J. Appl. Phys. 67 10 (1990) 6353-6359
143. Frensley W. Superlattices Microstruct. 11 3 (1992) 347-350
144. Lake R., Klimeck G., Bowen R.C., and Jovanovic D. J. Appl. Phys. 81 12 (1997) 7845-7869
145. Sabathil M., Hackenbuchner S., Majewski J.A., Zandler G., and Vogl P. J. Comput. Electron. 1 (2002) 81-85
146. Mamaluy D., Sabathil M., and Vogl P. J. Appl. Phys. 93 8 (2003) 4628-4633
147. Risch L. Proc. European Solid-State Device Research Conf. (2005) 63-68
148. Tsu R., and Esaki L. Appl. Phys. Lett. 22 11 (1973) 562-564
149. Karner M., Gehring A., Holzer S., Pourfath M., Wagner M., Kosina H., Grasser T., and Selberherr S. Proc. IWCE. Wien (2006) 255-256
150. Fischetti M.V. J. Appl. Phys. 83 1 (1998) 270-291
151. Fischetti M.V. Phys. Rev. B 59 7 (1999) 4901-4917
152. Szafer A., and Stone A.D. Phys. Rev. Lett. 62 3 (1989) 300-303
153. Venugopal R., Goasguen S., Datta S., and Lundstrom M.S. J. Appl. Phys. 95 1 (2004) 292-305
154. Sverdlov V.A., Oriols X., and Likharev K.K. IEEE Trans. Nanotechnol. 2 1 (2003) 59-63
155. Zhibin R., Venugopal R., Goasguen S., Datta S., and Lundstrom M.S. IEEE Trans. Electron Devices 50 9 (2003) 1914-1925
156. Frensley W. Rev. Modern Phys. 62 3 (1990) 745-791
157. Laux S.E., Kumar A., and Fischetti M.V. J. Appl. Phys. 95 10 (2004) 5546-5582
158. Rossi F., Di Carlo A., and Lugli P. Phys. Rev. Lett. 80 15 (1998) 3348-3351
159. Zaccaria R.P., and Rossi F. Phys. Rev. B 67 (2003) 113311-1-4
160. Ferrari G., Bordone P., and Jacoboni C. Phys. Lett. A 356 (2006) 371-375
161. Datta S. Electronic Transport in Mesoscopic Systems (1995), Cambridge University Press, Cambridge
162. Jungemann C., Subba N., Goo J.-S., Riccobene C., Xiang Q., and Meinerzhagen B. Solid-State Electron. 48 8 (2004) 1417-1422
163. Svizhenko A., Anantram M.P., Govindan T.R., Biegel B., and Venugopal R. J. Appl. Phys. 91 (2002) 2343-2354
164. Martinez A., Svizhenko A., Anantram M.P., Barker J.R., Brown A.R., and Asenov A. IEDM Techn. Dig. (2005) 627-630
165. Martinez A., Barker J.R., Anantram M.P., Svizhenko A., and Asenov A. Proc. IWCE. Wien (2006) 275-276
166. Svizhenko A., and Anantram M.P. IEEE Trans. Electron Devices 50 (2003) 1459-1466
167. Saito R., Dresselhaus G., and Dresselhaus M. Physical Properties of Carbon Nanotubes (1998), Imperial College Press, London
168. Martel R., Schmidt T., Shea H.R., Hertel T., and Avouris P. Appl. Phys. Lett. 73 17 (1998) 2447-2449
169. Hoenlein W., Kreupl F., Duesberg G., Graham A., Liebau M., Seidel R., and Unger E. IEEE Trans. Components Packag. Technol. 27 4 (2004) 629-634
170. Appenzeller J., Radosavljevic M., Knoch J., and Avouris P. Phys. Rev. Lett. 92 (2004) 048301
171. Javey A., Guo J., Wang Q., Lundstrom M., and Dai H. Lett. Nat. 424 6949 (2003) 654-657
172. Caroli C., Combescot R., Nozieres P., and Saint-James D. J. Phys. C:Solid State Phys. 4 8 (1971) 916-929
173. Caroli C., Combescot R., Lederer D., Nozieres P., and Saint-James D. J. Phys. C:Solid State Phys. 4 16 (1971) 2598-2610
174. Combescot R. J. Phys. C:Solid State Phys. 4 16 (1971) 2611-2622
175. Caroli C., Combescot R., Nozieres P., and Saint-James D. J. Phys. C:Solid State Phys. 5 1 (1972) 21-42
176. Kim G., and Arnold G.B. Phys. Rev. B 38 5 (1988) 3252-3262
177. Anda E.V., and Flores F. J. Phys.: Cond. Matter 3 46 (1991) 9087-9101
178. Chen L.Y., and Ting C.S. Phys. Rev. B 43 5 (1991) 4534-4537
179. Lake R., and Datta S. Phys. Rev. B 45 12 (1992) 6670-6685
180. Grein C.H., Runge E., and Ehrenreich H. Phys. Rev. B 47 19 (1993) 12590-12597
181. Kim G., Suh H., and Lee E. Phys. Rev. B 52 4 (1995) 2632-2639
182. Klimeck G., Lake R., Bowen C., Frensley W.R., and Moise T.S. Appl. Phys. Lett. 67 17 (1995) 2539-2541
183. Bowen C., Fernando C.L., Klimeck G., Chatterjee A., Blanks D., Lake R., Hu J., Davis J., Kulkarni M., Hattangady S., and Chen I.-C. IEDM Techn. Dig. (1997) 35.1.1-3514.3514.3514
184. McLennan M.J., Lee Y., and Datta S. Phys. Rev. B 43 17 (1991) 13846-13884
185. Rivas C., Lake R., Klimeck G., Frensley W.R., Fischetti M.V., Thompson P.E., Rommel S.L., and Berger P.R. Appl. Phys. Lett. 78 8 (2001) 814-916
186. Rivas C., Lake R., Frensley W.R., Klimeck G., Thomson P.E., Hobart K.D., Rommel S.L., and Berger P.R. J. Appl. Phys. 94 8 (2003) 5005-5013
187. Venugopal R., Paulsson M., Goasguen S., Datta S., and Lundstrom M.S. J. Appl. Phys. 93 9 (2003) 5613-5625
188. Nardelli M.B. Phys. Rev. B 60 11 (1999) 7828-7833
189. Taylor J., Guo H., and Wang J. Phys. Rev. B 63 (2001) 245407
190. Mehrez H., Taylor J., Guo H., Wang J., and Roland C. Phys. Rev. Lett. 84 12 (2000) 2682-2685
191. Orlikowski D., Mehrez H., Taylor J., Guo H., Wang J., and Roland C. Phys. Rev. B 63 (2001) 155412
192. Anantram M.P. Appl. Phys. Lett. 78 14 (2001) 2055-2057
193. Maiti A., Svizhenko A., and Anantram M.P. Phys. Rev. Lett. 88 (2002) 126805
194. Kaun C.-C., Larade B., Mehrez H., Taylor J., and Guo H. Phys. Rev. B 65 (2002) 205416
195. Cuniberti G., Gutiérrez R., Fagas G., Grossmann F., Richter K., and Schmidt R. Physica E 12 1-4 (2002) 749-752
196. Palacios J.J., Jimenez A.J.P., Louis E., SanFabioa E., and Verges J. Phys. Rev. Lett. 90 (2003) 106801
197. Xue Y., and Ratner M.A. Appl. Phys. Lett. 83 12 (2003) 2429-2431
198. Xia T.-S., Register L.F., and Banerjee S.K. J. Appl. Phys. 95 3 (2004) 1597-1599
199. Guo J., Datta S., Lundstrom M., and Anantram M. Int. J. Multiscale Comput. Eng. 2 (2004) 257
200. Guo J. J. Appl. Phys. 98 (2005) 063519
201. Guo J., Hassan S., Javey A., Bosman G., and Lundstrom M. IEEE Trans. Nanotechnol. 4 6 (2005) 715-721
202. Svizhenko A., Anantram M., and Govindan T. IEEE Trans. Nanotechnol. 4 5 (2005) 557-562
203. Svizhenko A., and Anantram M. Phys. Rev. B 72 (2005) 085430-085440
204. Brandbyge M., Mozos J.-L., Ordejón P., Taylor J., and Stokbro K. Phys. Rev. B 65 (2002) 165401
205. Louis E., Vergés J.A., Palacios J.J., Pérez-Jiménez A.J., and SanFabián E. Phys. Rev. B 67 (2003) 155321
206. Tian W., Datta S., Hong S., Reifenberger R., Henderson J.I., and Kubiak C.P. J. Chem. Phys. conf 109 7 (1998) 2874-2882
207. Damle P.S., Ghosh A.W., and Datta S. Phys. Rev. B 64 (2001) 201403
208. Seminario J.M., Cordova L.E., and Derosa P.A. Proc. IEEE 91 11 (2003) 1958-1975
209. Galperin M., Nitzan A., Sek S., and Majda M. J. Electroanalytical Chem. 550/551 (2003) 337-350
210. Derosa P.A., Guda S., and Seminario J.M. J. Am. Chem. Soc. 125 47 (2003) 14240-14241
211. Xue Y., and Ratner M.A. Phys. Rev. B 69 (2004) 085403
212. Ghosh A.W., Rakshit T., and Datta S. Nano Lett. 4 4 (2004) 565-568
213. Mahan G.D. Many-Particle Physics (1990), Premium Press, New York
214. Zahid F., Ghosh A., Paulsson M., Polizzi E., and Datta S. Phys. Rev. B 70 (2004) 245317
215. John D., Castro L., Pereira P., and Pulfrey D. Proc. NSTI Nanotech. 3 (2004) 65-68
216. Pourfath M., and Kosina H. Fast convergent Schrödinger-Poisson solver for the static and dynamic analysis of carbon nanotube field effect transistors, in: Lecture Notes in Computer Science 3743: Large-Scale Scientific Computing (2006), Springer Verlag 578-585
217. Venugopal R., Ren Z., Datta S., Lundstrom M.S., and Jovanovic D. J. Appl. Phys. 92 7 (2002) 3730-3739
218. Pourfath M., Kosina H., Cheong B., Park W., and Selberherr S. Proc. European Solid-State Device Research Conf. (2005) 541-544
219. Javey A., Guo J., Farmer D., Wang Q., Yenilmez E., Gordon R., Lundstrom M., and Dai H. Nano Lett. 4 7 (2004) 1319-1322
220. Mahan G. Phys. Rev. B 68 (2003) 125409
221. Popov V.N., and Lambin P. Phys. Rev. B 74 (2006) 075415
222. Pourfath M., Kosina H., and Selberherr S. J. Comp. Electron. 5 2/3 (2006) 155-159
223. Koswatta S., Hasan S., Lundstrom M., Anantram M., and Nikonov D. Ballisticity of nanotube FETs: Role of phonon energy and gate bias. Appl. Phys. Lett 89 2 (2006) pp. 23125-1-3
224. Jacoboni C. Semicond. Sci. Technol. 7 3B (1992) B6-B11
225. Wigner E. Phys. Rev. 40 (1932) 749-759
226. Kosina H., and Nedjalkov M. Handbook of Theoretical and Computational Nanotechnology, Vol. 10 (2006), American Scientific Publishers, Los Angeles Ch. 14. Wigner function based device modeling, pp. 731-763
227. Louisell W.H. Quantum Statistical Properties of Radiation (1973), J. Willey & Sons., New York
228. Lindblad G. On the generators of quantum dynamical semigroups. Comm. Math. Phys. 48 (1976) 119-130
229. Gebauer R., and Car R. Phys. Rev. Lett. 93 16 (2004) 160404
230. Gebauer R., and Car R. Phys. Rev. B 70 12 (2004) 125324
231. Jackson J.D. Classical Electrodynamics. 3rd Ed. (1998), J. Wiley & Sons., New York
232. Kosina H., Nedjalkov M., and Selberherr S. J. Comp. Electron. 2 2-4 (2003) 147-151
233. Degond P., and Ringhofer C. J. Stat. Phys. 112 3 (2003) 587-628
234. Bourgade J.-P., Degond P., Mehats F., and Ringhofer C. J. Math. Phys. 47 4 (2006) 043302
235. Ravaioli U., Osman M., Pötz W., Kluksdahl N., and Ferry D. Physica B 134 (1985) 36-40
236. Kluksdahl N., Pötz W., Ravaioli U., and Ferry D. Superlattices Microstruct. 3 1 (1987) 41-45
237. Frensley W. Phys. Rev. Lett. 57 22 (1986) 2853-2856
238. Frensley W. IEDM Techn. Dig. (1986) 571-574
239. Frensley W. Phys. Rev. B 36 3 (1987) 1570-1580
240. Kluksdahl N., Kriman A., Ferry D., and Ringhofer C. Phys. Rev. B 39 11 (1989) 7720-7735
241. Frensley W. Solid-State Electron. 32 12 (1989) 1235-1239
242. Mains R.K., and Haddad G.I. J. Appl. Phys. 64 7 (1988) 3564-3569
243. Buot F., and Jensen K. Phys. Rev. B 42 15 (1990) 9429-9457
244. Shifren L., and Ferry D.K. J. Comp. Electron. 1 (2002) 55-58
245. Nedjalkov M., Kosik R., Kosina H., and Selberherr S. Proc. Intl. Conf. on Simulation of Semiconductor Processes and Devices (2002) 187-190
246. Shifren L., Ringhofer C., and Ferry D. Phys. Lett. A 306 (2003) 332-336
247. Kosina H., Nedjalkov M., Selberherr S., Laudon M., and Romanowicz B. Quantum Monte Carlo simulation of a resonant tunneling diode including phonon scattering (2003), Nanotech, Computational Publications, San Francisco 190-193
248. Gehring A., and Kosina H. J. Comp. Electron. 4 1/2 (2005) 67-70
249. Wettstein A., Schenk A., and Fichtner W. IEEE Trans. Electron Devices 48 2 (2001) 279-284
250. Shifren L., Ringhofer C., and Ferry D. IEEE Trans. Electron Devices 50 3 (2003) 769-773
251. Querlioz D., Saint-Martin J., and Do V.N. IEEE Trans. Nanotechnol. 5 6 (1998) 737-744
252. Kosina H., Sverdlov V., and Grasser T. Proc. Intl. Conf. on Simulation of Semiconductor Processes and Devices (2006) 357-360
253. Wang J., Polizzi E., and Lundstrom M. J. Appl. Phys. 96 4 (2004) 2192-2203
254. Wang J., Rahman A., Ghosh A., Klimeck G., and Lundstrom M. IEEE Trans. Electron Devices 52 7 (2005) 1589-1595
255. Luisier M., Schenk A., Fichtner W., and Klimeck G. Phys. Rev. B 74 (2006) pp. 205323-1-12