메뉴 건너뛰기




Volumn 48, Issue 2, 2001, Pages 279-284

Quantum device-simulation with the density-gradient model on unstructured grids

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; GRADIENT METHODS; MOS DEVICES; POISSON EQUATION; SEMICONDUCTOR DEVICE MODELS; SILICON ON INSULATOR TECHNOLOGY;

EID: 0035249575     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.902727     Document Type: Article
Times cited : (168)

References (20)
  • 11
    • 0032307766 scopus 로고    scopus 로고
    • Smooth quantum hydrodynamic model simulation of the resonant tunneling diode
    • -Smooth quantum hydrodynamic model simulation of the resonant tunneling diode VLSI Design, vol. 8, pp. 143-146, 1998.
    • VLSI Design, Vol. 8, Pp. 143-146, 1998.
  • 13
    • 0034418424 scopus 로고    scopus 로고
    • Resonant tunneling in the smooth quantum hydrodynamic model for semiconductor devices
    • -Resonant tunneling in the smooth quantum hydrodynamic model for semiconductor devices Transport Theory Stat. Phys., vol. 29, pp. 563-570, 2000.
    • Transport Theory Stat. Phys., Vol. 29, Pp. 563-570, 2000.
  • 14
    • 0030127934 scopus 로고    scopus 로고
    • A finite element method for the quantum hydrodynamic model for semiconductor devices
    • Z. ChenA finite element method for the quantum hydrodynamic model for semiconductor devices Comput. Math. Appl., vol. 31, pp. 17-26, 1996.
    • Comput. Math. Appl., Vol. 31, Pp. 17-26, 1996.
    • Chen, Z.1
  • 15
    • 0000449846 scopus 로고    scopus 로고
    • Quantum hydrodynamic simulation of hysteresis in the resonant tunneling diode
    • -Quantum hydrodynamic simulation of hysteresis in the resonant tunneling diode J. Comput. Phys., vol. 117, pp. 274-280, Mar. 1995.
    • J. Comput. Phys., Vol. 117, Pp. 274-280, Mar. 1995.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.