Modeling of size quantization in strained Si-nMOSFETs with the improved modified local density approximation

2005 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2005 Technical Proceedings

Volumn , Issue , 2005, Pages 33-36

  Nguyen, C D ^a   Jungemann, C ^a   Meinerzhagen, B ^a  

^a TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

Author keywords

Inversion layer; MOS devices; Quantization effects; Strained Si

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; DOPING (ADDITIVES); MATHEMATICAL MODELS; MOS DEVICES; POISSON EQUATION; ROBUSTNESS (CONTROL SYSTEMS); SILICON; THRESHOLD VOLTAGE;

IMLDA MODEL; INVERSION LAYER; QUANTIZATION EFFECTS; STRAINED SI;

MOSFET DEVICES;

EID: 32044467396     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. C. Jungemann, C. D. Nguyen, B. Neinhüs, S. Decker and B. Meinerzhagen, "Improved Modified Local Density Approximation for Modeling of Size Quantization in NMOSFETs", MSM'2001, (USA), pp. 458-461, 2001.
2. A. Wettstein, A. Schenk and W. Fichtner, "Quantum Device-Simulation with the Density-Gradient Model on Unstructured Grids", IEEE Trans. Elec. Dev., 48(2), 279-284, 2001.
3. C. D. Nguyen, A. T. Pham, C. Jungemann and B. Meinerzhagen, "Study of Charge Carrier Quantization in Strained Si-nMOSFETs", Materials Science in Semiconductor Processing, Vol. 8, pp. 363-366, 2005.
4. M. G. Ancona and B. A. Biegel, "Nonlinear Discretization Scheme for the Density-Gradient Equations", SISPAD'2000, (USA), pp. 196-199, 2000.
5. H. Akima, "A Method for Univariate Interpolation that Has the Accuracy of a Third-Degree Polynomial", ACM Transactions on Mathematical Software, vol. 17, pp. 183-192, 1991
6. F. Schäffler, "High-mobility Si and Ge structures", Semicond. Sci. Technol., vol. 12, pp. 115-1549, 1997.