Hydrodynamic modeling of AlGaN/GaN HEMTs

2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007

Volumn , Issue , 2007, Pages 273-276

  Vitanov, S ^a   Palankovski, V ^a   Murad, S ^c   Rodle T ^c   Quay, R ^d   Selberherr, S ^b  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

^b INSTITUTE FOR MICROELECTRONICS   (Austria)

^c NXP SEMICONDUCTORS   (Netherlands)

^d FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM NITRIDE; COMPUTER SOFTWARE; ELECTRIC FIELDS; ELECTRON TRANSPORT PROPERTIES; GALLIUM NITRIDE; HYDRODYNAMICS; III-V SEMICONDUCTORS; MONTE CARLO METHODS; WIDE BAND GAP SEMICONDUCTORS;

ALGAN/GAN HEMTS; DEVICE CHANNEL; ELECTRON TRANSPORT; HIGH ELECTRIC FIELDS; HIGH ELECTRON MOBILITY TRANSISTOR (HEMTS); HYDRODYNAMIC MODEL; MOBILITY MODEL; SOFTWARE SIMULATION TOOLS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84901346402     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1007/978-3-211-72861-1_65     Document Type: Conference Paper

References (5)

1. Minimos-NT Device and Circuit Simulator, User's Guide, Release 2.0, 2000. http://www.iue.tuwien.ac.at/mmut.
2. S. Vitanov, V. Palankovski, R. Quay, and E. Langer, in 28th ICPS, p. 244, 2006.
3. D. Caughey and R. Thomas, Proc. IEEE, Vol. 52, pp. 2192-2193, 1967.
4. W. Hänsen. M Orlowski. and W. Weber, in 18th ESSDERC, pp. 597-606, 1988.
5. V. Palankovski and R. Quay, Analysis and Simulation of Heierostructure Devices. Wien, New York: Springer, 2004.