Improved modified local density approximation for modeling of size quantization in NMOSFETs

2001 International Conference on Modeling and Simulation of Microsystems - MSM 2001

Volumn , Issue , 2001, Pages 458-461

  Jungemann, C ^a   Nguyen, C D ^a   Neinhus B ^a   Decker, S ^a   Meinerzhagen, B ^a  

^a UNIVERSITY OF BREMEN   (Germany)

Author keywords

Inversion layer; MOS devices; Quantization effects

Indexed keywords

APPROXIMATION THEORY; CAPACITANCE; CARRIER CONCENTRATION; COMPUTER SIMULATION; CRYSTAL LATTICES; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTROSTATICS; MATHEMATICAL MODELS; QUANTUM THEORY; SILICA; SILICON; THERMAL EFFECTS; THRESHOLD VOLTAGE;

ELECTROSTATIC POTENTIALS; INVERSION LAYERS; QUANTIZATION EFFECTS; QUANTUM EFFECTS;

MOSFET DEVICES;

EID: 0842306691     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

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