A three-dimensional quantum simulation of silicon nanowire transistors with the effective-mass approximation

Journal of Applied Physics

Volumn 96, Issue 4, 2004, Pages 2192-2203

  Wang, Jing ^a   Polizzi, Eric ^b   Lundstrom, Mark ^a  

^a PURDUE UNIVERSITY   (United States)

^b Purdue University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BUTTIKER PROBES; ELECTROSTATIC POTENTIAL; QUANTUM INTERFERENCE; SILICON NANOWIRE TRANSISTOR (SNWT);

APPROXIMATION THEORY; BAND STRUCTURE; CHEMICAL VAPOR DEPOSITION; COMPUTATIONAL COMPLEXITY; CURRENT DENSITY; EIGENVALUES AND EIGENFUNCTIONS; ELECTRON MOBILITY; FERMI LEVEL; FINITE ELEMENT METHOD; GREEN'S FUNCTION; HAMILTONIANS; INTEGRATION; NANOSTRUCTURED MATERIALS; POISSON EQUATION; QUANTUM THEORY;

FIELD EFFECT TRANSISTORS;

EID: 4344606224     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1769089     Document Type: Article

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