Hole mobility and thermal velocity enhancement for uniaxial stress in Si up to 4 GPa

IEEE Transactions on Electron Devices

Volumn 54, Issue 2, 2007, Pages 291-296

  Fan, Xiao Feng ^a   Register, Leonard Franklin ^a   Winstead, Brian ^b   Foisy, Mark C ^b   Chen, Wanqiang ^a   Zheng, Xin ^a   Ghosh, Bahniman ^a   Banerjee, Sanjay K ^a  

^a The University of Texas at Austin   (United States)

^b FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

Mobility; Monte Carlo simulation; Strained silicon; Thermal velocity; Uniaxial stress

Indexed keywords

COMPRESSIVE STRESS; COMPUTER SIMULATION; HOLE MOBILITY; MONTE CARLO METHODS; TENSILE STRESS;

THERMAL VELOCITY; UNIAXIAL STRESS;

SEMICONDUCTING SILICON;

EID: 33847653208     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.888667     Document Type: Article

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