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Volumn 3743 LNCS, Issue , 2006, Pages 578-585

Fast convergent Schrödinger-Poisson solver for the static and dynamic analysis of carbon nanotube field effect transistors

Author keywords

[No Author keywords available]

Indexed keywords

CARBON NANOTUBES; COMPUTER SIMULATION; CONVERGENCE OF NUMERICAL METHODS; INTEGRATION; PARTIAL DIFFERENTIAL EQUATIONS; PROBLEM SOLVING;

EID: 33745312327     PISSN: 03029743     EISSN: 16113349     Source Type: Book Series    
DOI: 10.1007/11666806_66     Document Type: Conference Paper
Times cited : (18)

References (20)
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    • Appenzeller, J., Radosavljevic, M., Knoch, J., Avouris, P.: Tunneling Versus Thermionic Emission in One-Dimensional Semiconductors. Phys.Rev.Lett. 92 (2004) 048301
    • (2004) Phys. Rev. Lett. , vol.92 , pp. 048301
    • Appenzeller, J.1    Radosavljevic, M.2    Knoch, J.3    Avouris, P.4
  • 4
    • 0442311241 scopus 로고    scopus 로고
    • A numerical study of scaling issues for schottky barrier carbon nanotube transistors
    • Guo, J., Datta, S., Lundstrom, M.: A Numerical Study of Scaling Issues for Schottky Barrier Carbon Nanotube Transistors. IEEE Trans. Electron Devices 51 (2004) 172-177
    • (2004) IEEE Trans. Electron Devices , vol.51 , pp. 172-177
    • Guo, J.1    Datta, S.2    Lundstrom, M.3
  • 7
    • 14744272771 scopus 로고    scopus 로고
    • High performance n-type carbon nanotube field-effect transistors with chemically doped contacts
    • Javey, A., Tu, R., Farmer, D.B., Guo, J., Gordon, R.G., Dai, H.: High Performance n-Type Carbon Nanotube Field-Effect Transistors with Chemically Doped Contacts. Nano Lett. 5 (2005) 345-348
    • (2005) Nano Lett. , vol.5 , pp. 345-348
    • Javey, A.1    Tu, R.2    Farmer, D.B.3    Guo, J.4    Gordon, R.G.5    Dai, H.6
  • 8
    • 6344223254 scopus 로고    scopus 로고
    • A schrödinger-poisson solver for modeling carbon nanotube FETs
    • John, D., Castro, L., Pereira, P., Pulfrey, D.: A Schrödinger- Poisson Solver for Modeling Carbon Nanotube FETs. In: Proc. NSTI Nanotech. 3 (2004) 65-68
    • (2004) Proc. NSTI Nanotech. , vol.3 , pp. 65-68
    • John, D.1    Castro, L.2    Pereira, P.3    Pulfrey, D.4
  • 9
    • 9744264882 scopus 로고    scopus 로고
    • Quantum capacitance in nanoscale device modeling
    • John, D.L., Castro, L.C., Pulfrey, D.L.: Quantum Capacitance in Nanoscale Device Modeling. J.Appl.Phys. 96 (2004) 5180-5184
    • (2004) J. Appl. Phys. , vol.96 , pp. 5180-5184
    • John, D.L.1    Castro, L.C.2    Pulfrey, D.L.3
  • 13
    • 84925794148 scopus 로고
    • Techniques for small-signal analysis of semiconductor devices
    • Laux, S.E.: Techniques for Small-Signal Analysis of Semiconductor Devices. IEEE Trans. Electron Devices 32 (1985) 2028-2037
    • (1985) IEEE Trans. Electron Devices , vol.32 , pp. 2028-2037
    • Laux, S.E.1
  • 15
    • 0043226242 scopus 로고
    • Notes on the adaptive simpson quadrature routine
    • Lyness, J.N.: Notes on the Adaptive Simpson Quadrature Routine. J.ACM 16 (1969) 483-495
    • (1969) J. ACM , vol.16 , pp. 483-495
    • Lyness, J.N.1
  • 17
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    • High performance of potassium n-doped carbon nanotube field-effect transistors
    • Radosavljevic, M., Appenzeller, J., Avouris, P., Knoch, J.: High Performance of Potassium n-Doped Carbon Nanotube Field-Effect Transistors. Appl.Phys.Lett. 84 (2004) 3693-3695
    • (2004) Appl. Phys. Lett. , vol.84 , pp. 3693-3695
    • Radosavljevic, M.1    Appenzeller, J.2    Avouris, P.3    Knoch, J.4
  • 20
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    • Iteration methods for calculating self-consistent fields in semiconductor inversion layers
    • Stern, F.: Iteration Methods for Calculating Self-Consistent Fields in Semiconductor Inversion Layers. Phys.stat.sol.(b) 6 (1970) 56-67
    • (1970) Phys. Stat. Sol. (b) , vol.6 , pp. 56-67
    • Stern, F.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.